GaAlAs红外发光二极管功率老化对其1/f噪声特性的影响
包军林, 庄奕琪, 杜磊, 马仲发, 李伟华, 李聪. GaAlAs红外发光二极管功率老化对其1/f噪声特性的影响[J]. 红外与毫米波学报, 2006, 25(1): 33.
包军林, 庄奕琪, 杜磊, 马仲发, 李伟华, 李聪. EFFECTS OF POWER AGING ON 1/f NOISE CHARACTERISTICS FOR GaAlAs IR LED BAO Jun-Lin ZHUANG Yi-Qi DU Lei MA Zhong-Fa LI Wei-Hua LI Cong[J]. Journal of Infrared and Millimeter Waves, 2006, 25(1): 33.
[1] Doru Ursutiu,Brian K Jones.Low-frequency noise used as a lifetime test of LEDs [ J ].Semicond.Sci.Technol.,1996,42(11):1133-1136.
[2] ZHUANG Yi-Qi,QING Sun.Noise and its Minimizing Technology in Semiconductor Devices[ M].Beijing:National DefenceIndustry Press(庄奕琪,孙青.半导体器件中的噪声及其低噪声化技术.北京:国防出版社),1993:160-187.
[3] Chen X Y,Pedersen A,Helleso O G,et al.Electrical noise of laser diodes measured over a wide range of bias currents [ J ].Microelectronics Reliability,2000,40 (6):1925-1928.
[4] BAO Jun-Lin,ZHUANG Yi-Qi,DU Lei,et al.Noise testing and analyzing system of electronic device based on virtual instrumentation [ J ].Journal of Apparatus and Instrument(包军林,庄奕琪,杜磊等.基于虚拟仪器的电子器件低频噪声测试分析系统,仪器与仪表学报),2004,3(supplement):257-261.
[5] YU Li-Sheng.Semiconductor Heterojunction Physics [ M ],Beijing:Scientific&Technical Press(虞丽生.半导体异质结物理.北京:科学技术出版社),1990,97-110.
[6] WANG Da-Jun,ZHANG Pei,LUAN Feng,et al.InGaAlP quantum wells light emitting devices with periodic microstructures[J].J.InfraredMillim.Waves(王大军,章蓓,栾峰,等.带有周期性微结构的InGaAlP量子阱发光二极管,红外与毫米波学报),2002,21(1):87-90.
包军林, 庄奕琪, 杜磊, 马仲发, 李伟华, 李聪. GaAlAs红外发光二极管功率老化对其1/f噪声特性的影响[J]. 红外与毫米波学报, 2006, 25(1): 33. 包军林, 庄奕琪, 杜磊, 马仲发, 李伟华, 李聪. EFFECTS OF POWER AGING ON 1/f NOISE CHARACTERISTICS FOR GaAlAs IR LED BAO Jun-Lin ZHUANG Yi-Qi DU Lei MA Zhong-Fa LI Wei-Hua LI Cong[J]. Journal of Infrared and Millimeter Waves, 2006, 25(1): 33.
PDF全文
