[1] Caporaso G. The dielectric wall accelerator, frontiers of accelerator technology[M]. New York: World Scientific Publishing Company,1996.

[2] 严萍,王珏,张适昌. 新概念介质壁加速器[J].电工电能新技术,2005, 24(4): 43-46.(Yan Ping, Wang Jue, Zhang Shichang. New concept of dielectric wall accelerator. Advanced Technology of Electrical Engineering and Energy, 2005, 24(4): 43-46)

[3] Sampayan S, Caporaso G, Chen Y J, et al. Development of a compact radiography accelerator using dielectric accelerator technology[C]//Proc of the Particle Accelerator Conference. 2005: 716-718.

[4] 袁建强,谢卫平,周良骥,等. 光导开关研究进展及其在脉冲功率技术中的应用[J]. 强激光与粒子束,2008,20(1): 171-176. (Yuan Jianqiang, Xie Weiping, Zhou Liangji, et al. Developments and applications of photoconductive semiconductor switches in pulsed power technology. High Power Laser and Particle Beams, 2008, 20(1): 171-176)

[5] Nunnally W C. Critical component requirements for compact pulse power system architectures[J]. IEEE Trans on Plasma Science, 2005,33(4): 1262-1267.

[6] Malcolm B. Some future directions for repetitive pulsed power[J]. IEEE Trans on Plasma Science, 2002, 30: 262-266.

[7] Loubriel G M, Zutavern F J, Alan M, et al. Longevity of optically activated, high gain GaAs photoconductive semiconductor switches[J]. IEEE Trans on Plasma Science, 1998,26: 1393-1402.

[8] 杨宏春,崔海娟,孙云卿,等. 高功率、长寿命GaAs光电导开关[J].科学通报,2010,55(16): 1618-1625.(Yang Hongchun, Cui Haijuan, Sun Yunqing, et al. High power and long life GaAs photoconductive semiconductor switch.Chinese Science Bulletin, 2010,55(16): 1618-1625)

[9] Lebedev A A. Deep level in silicon carbide[J]. International Journal of High Speed Electronics and Systems, 2006, 16(3): 779-823.

[10] 吴朝阳, 陈志刚, 薛长江,等.半导体激光器触发导开关实验研究[J]. 强激光与粒子束,2012,24(3): 635-638. (Wu Zhaoyang, Chen Zhigang, Xue Changjiang, et al. Experimental research on GaAs photoconductive semiconductor switches triggered by laser diode. High Power Laser and Particle Beams, 2012,24(3): 635-638)