红外与毫米波学报, 2015, 34 (3): 286, 网络出版: 2015-08-25   

可见增强的32×32元平面型InGaAs/In面阵探测器

32×32 pixel planar InGaAs/InP detector with response extended to visible wavelength band
杨波 1,2,3邵秀梅 1,2唐恒敬 1,2邓洪海 1,2李雪 1,2魏鹏 1,2王云姬 1,2,3李淘 1,2龚海梅 1,2
作者单位
1 中国科学院上海技术物理研究所 传感技术国家重点实验室, 上海 200083
2 中国科学院上海技术物理研究所 红外成像材料与器件重点实验室, 上海 200083
3 中国科学院大学, 北京 100039
引用该论文

杨波, 邵秀梅, 唐恒敬, 邓洪海, 李雪, 魏鹏, 王云姬, 李淘, 龚海梅. 可见增强的32×32元平面型InGaAs/In面阵探测器[J]. 红外与毫米波学报, 2015, 34(3): 286.

YANG Bo, SHAO Xiu-Mei, TANG Heng-Jing, DENG Hong-Hai, LI Xue, WEI Peng, WANG Yun-Ji, LI Tao, GONG Hai-Mei. 32×32 pixel planar InGaAs/InP detector with response extended to visible wavelength band[J]. Journal of Infrared and Millimeter Waves, 2015, 34(3): 286.

参考文献

[1] Howard W Yoon, Matt C Dopkiss, George P Eppeldauer. Performance Comparisons of InGaAs, extended InGaAs and Short-wave HgCdTe Detectors between 1μm and 2.5μm: Infrared Spaceborne Remote Sensing XIV, 2006[C].San Diego: Marija Strojnik, 2006: 6297031~10.

[2] Tara Martin, Peter Dixon, Mari Anne Gagliardi. 320×240 pixel InGaAs/InP focal plane array for short-wave infrared and visible light imaging: Semiconductor Photodetectors II, 2005[C].Bellingham: Marshall J Cohen, Eustace L Dereniak, 2005: 85-91.

[3] Tara Martin, Robert Brubaker, Peter Dixon. 640×512 InGaAs focal plane array camera for visible and SWIR imaging: Infrared Technology and Applications XXXI, 2005[C]. Bjorn F Andersen, Gabor F Fulop, 2005: 12-20.

[4] Battaglia J, Blessinger M, Enriquez M, et al. An uncooled 1280 × 1024 InGaAs focal plane array for small platform, shortwave infrared imaging: Infrared Technology and Applications XXXV, 2009[C]: Bjorn F Andersen, Gabor F Fulop, 2009: 72983C-1~8.

[5] Henry Yuan, Gary Apgar, Jongwoo Kim, et al.FPA Development: from InGaAs, InSb, to HgCdTe: Infrared Technology and Applications XXXIV, 2008[C]: Bjorn F Andersen, Gabor F Fulop, 2008: 69403C-1~11.

[6] Honghai Deng, Hengjing Tang, Tao Li, et al.The temperature-dependent photoresponse uniformity of InGaAs sub-pixels infrared detector by LBIC technique [J]. Semiconductor Science and Technology, 2012, 27(115018): 1-5.

[7] Emziane M, Nicholas R J. Optimization of InGaAs(P) photovoltaic cells lattice matched to InP [J], J. Appl.Phys., 2007, 101: 054503.

[8] Lal R, Jain M, S Gupta, P Chakrabarti. An analytical model of a double hetero-structure mid-infrared photodetector [J], Infrared. Phys. Technol., 2003, 44: 125-132.

杨波, 邵秀梅, 唐恒敬, 邓洪海, 李雪, 魏鹏, 王云姬, 李淘, 龚海梅. 可见增强的32×32元平面型InGaAs/In面阵探测器[J]. 红外与毫米波学报, 2015, 34(3): 286. YANG Bo, SHAO Xiu-Mei, TANG Heng-Jing, DENG Hong-Hai, LI Xue, WEI Peng, WANG Yun-Ji, LI Tao, GONG Hai-Mei. 32×32 pixel planar InGaAs/InP detector with response extended to visible wavelength band[J]. Journal of Infrared and Millimeter Waves, 2015, 34(3): 286.

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