Chinese Optics Letters, 2018, 16 (6): 060401, Published Online: Jul. 2, 2018 Copy Citation Text  本文已被引 2 次  Follow This Article

Figures & Tables

Fig. 1. Structure of our fabricated 4H-SiC APDs. (a) Schematic cross-section of the 4H-SiC APDs; (b) profile of the beveled mesa, where the top-view image of one fabricated 4H-SiC APD with 600 μm diameter is shown in the inset.

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Fig. 2. Dark current of fabricated large-area 4H-SiC APDs. (a) Comparison of dark current with and without passivation; (b) dark current of fabricated APDs with various sizes.

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Fig. 3. I–V measurements of the fabricated 4H-SiC APD with 600 μm diameter, where the multiplication gain is calculated.

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Fig. 4. Spectral response characteristics and external quantum efficiency of fabricated 4H-SiC APD with 600 μm diameter.

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Fig. 5. Performance of the fabricated large-area 4H-SiC APD compared with the previously reported devices. (a) Comparison of multiplication gain; (b) comparison of dark current at the gain of 1000.

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Xingye Zhou, Jia Li, Weili Lu, Yuangang Wang, Xubo Song, Shunzheng Yin, Xin Tan, Yuanjie Lü, Hongyu Guo, Guodong Gu, Zhihong Feng. Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection[J]. Chinese Optics Letters, 2018, 16(6): 060401.