High-repetition-rate and high-power picosecond regenerative amplifier based on a single bulk Nd:GdVO4 crystal Download: 736次
1 State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Figures & Tables
Fig. 1. Parameter separatrix (colored blue and yellow) and curve of $\text{NRT}^{\text{MAX}}$ (colored bold black). The red star indicates the optimum working point for 100 kHz repetition rate operation.
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Fig. 2. Schematic of the experimental setup: PP, pulse picker; TFP, thin-film polarizer; FR, Faraday rotator; HWP, half-wave plate; QWP, quarter-wave plate; PC, Pockels cell. The beam inside the RA cavity propagates along the 15 mm long $a$-axis of the Nd:GdVO4 crystal.
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Fig. 3. CW output power versus absorbed pump power.
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Fig. 4. (a) RA regime output power versus absorbed pump power; (b) the last five intracavity signals of the RA.
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Fig. 5. Intensity autocorrelation traces of the oscillator and RA output.
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Fig. 6. (a) Long-term power stability measurement of the RA output. (b) RA output beam quality.
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Table1. Basic properties of three Nd-doped single crystals (see Refs. [35–42]).
Parameter | Nd:YAG | Nd:YVO | Nd:GdVO4 |
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Pump wavelength (nm) | 808 869 885 | 808 880 888 | 808 880 888 | Emission wavelength (nm) | 1064 | 1064 | 1063 | Emission bandwidth (nm) | 0.45 | 0.8 | 1.25 | Efficient emission cross-section | at 1064 nm ($10^{-19}~\text{cm}^{2}$) | 2.8 | 13.5 ($\unicode[STIX]{x1D70B}$) | 7.6 ($\unicode[STIX]{x1D70B}$) | 6.5 ($\unicode[STIX]{x1D70E}$) | 1.2 ($\unicode[STIX]{x1D70E}$) | Upper state lifetime ($\unicode[STIX]{x03BC}\text{s}$) | 230 | 91 | 90 | Nonlinear refractive index | ($10^{-16}~\text{cm}^{2}/\text{W}$) | 8.1 | 14.7 | 12.6 | Thermal conductivity at 300 K | ($\text{W}/\text{mK}$) | 14 | 5.1 (a) | 10.1 (a) | 5.23 (c) | 11.4 (c) | Absorption cross-section at | 808 nm ($10^{-19}~\text{cm}^{2}$) | 0.41 | 2.7 ($\unicode[STIX]{x1D70B}$) | 5.2 ($\unicode[STIX]{x1D70B}$) | 1.2 ($\unicode[STIX]{x1D70E}$) | 1.23 ($\unicode[STIX]{x1D70E}$) | Refractive index at 1064 nm | 1.820 | 2.165 (e) | 2.192 (e) | 1.957 (o) | 1.972 (o) |
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Table2. Key parameter values for simulation.
Parameter | Value | Parameter | Value |
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Stable state small signal | gain $G_{0}$ | 1.91 | Round trip loss $l$ | 0.04 | Emission cross-section | | Upper state lifetime | | $\unicode[STIX]{x1D70E}$ ($\text{cm}^{2}$) | $7.6\times 10^{-19}$ | $T_{1}$ ($\unicode[STIX]{x03BC}\text{s}$) | 90 |
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Jie Guo, Wei Wang, Hua Lin, Xiaoyan Liang. High-repetition-rate and high-power picosecond regenerative amplifier based on a single bulk Nd:GdVO4 crystal[J]. High Power Laser Science and Engineering, 2019, 7(2): 02000e35.