High Power Laser Science and Engineering, 2019, 7 (2): 02000e35, Published Online: Jun. 24, 2019  

High-repetition-rate and high-power picosecond regenerative amplifier based on a single bulk Nd:GdVO4 crystal Download: 736次

Author Affiliations
1 State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Figures & Tables

Fig. 1. Parameter separatrix (colored blue and yellow) and curve of $\text{NRT}^{\text{MAX}}$ (colored bold black). The red star indicates the optimum working point for 100 kHz repetition rate operation.

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Fig. 2. Schematic of the experimental setup: PP, pulse picker; TFP, thin-film polarizer; FR, Faraday rotator; HWP, half-wave plate; QWP, quarter-wave plate; PC, Pockels cell. The beam inside the RA cavity propagates along the 15 mm long $a$-axis of the Nd:GdVO4 crystal.

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Fig. 3. CW output power versus absorbed pump power.

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Fig. 4. (a) RA regime output power versus absorbed pump power; (b) the last five intracavity signals of the RA.

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Fig. 5. Intensity autocorrelation traces of the oscillator and RA output.

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Fig. 6. (a) Long-term power stability measurement of the RA output. (b) RA output beam quality.

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Table1. Basic properties of three Nd-doped single crystals (see Refs. [3542]).

Parameter Nd:YAG Nd:YVONd:GdVO4
Pump wavelength (nm)808 869 885808 880 888 808 880 888
Emission wavelength (nm) 1064 1064 1063
Emission bandwidth (nm) 0.45 0.8 1.25
Efficient emission cross-section
at 1064 nm ($10^{-19}~\text{cm}^{2}$)2.813.5 ($\unicode[STIX]{x1D70B}$)7.6 ($\unicode[STIX]{x1D70B}$)
6.5 ($\unicode[STIX]{x1D70E}$)1.2 ($\unicode[STIX]{x1D70E}$)
Upper state lifetime ($\unicode[STIX]{x03BC}\text{s}$)2309190
Nonlinear refractive index
($10^{-16}~\text{cm}^{2}/\text{W}$)8.114.712.6
Thermal conductivity at 300 K
($\text{W}/\text{mK}$)145.1 (a)10.1 (a)
5.23 (c) 11.4 (c)
Absorption cross-section at
808 nm ($10^{-19}~\text{cm}^{2}$)0.412.7 ($\unicode[STIX]{x1D70B}$)5.2 ($\unicode[STIX]{x1D70B}$)
1.2 ($\unicode[STIX]{x1D70E}$)1.23 ($\unicode[STIX]{x1D70E}$)
Refractive index at 1064 nm 1.820 2.165 (e) 2.192 (e)
1.957 (o) 1.972 (o)

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Table2. Key parameter values for simulation.

ParameterValue ParameterValue
Stable state small signal
gain $G_{0}$1.91Round trip loss $l$0.04
Emission cross-section Upper state lifetime
$\unicode[STIX]{x1D70E}$ ($\text{cm}^{2}$)$7.6\times 10^{-19}$$T_{1}$ ($\unicode[STIX]{x03BC}\text{s}$)90

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Jie Guo, Wei Wang, Hua Lin, Xiaoyan Liang. High-repetition-rate and high-power picosecond regenerative amplifier based on a single bulk Nd:GdVO4 crystal[J]. High Power Laser Science and Engineering, 2019, 7(2): 02000e35.

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