光电子快报(英文版), 2015, 11 (5): 352, Published Online: Oct. 12, 2017  

Uncooled InAs0.09Sb0.91photoconductors with cutoff wavelength extended to 11.5 μm

Author Affiliations
1 College of Electronics and Information Engineering, Tongji University, Shanghai 201804, China
2 Huaxing Infrared Device Company, Xi’an 712099, China
3 Hamamatsu Photonics K. K., 5000 Hirakuchi, Hamakita 434-8601, Japan
Basic Information
DOI: 10.1007/s11801-015-5122-y
中图分类号: --
栏目:
项目基金: This work has been supported by the Fundamental Research Funds for the Central Universities in China.
收稿日期: Jul. 1, 2015
修改稿日期: --
网络出版日期: Oct. 12, 2017
通讯作者: GAO Yu-zhu (gaoyuzhu@tongji.edu.cn)
备注: --

GAO Yu-zhu, GONG Xiu-ying, ZHOU Ran, LI Ji-jun, FENG Yan-bin, Takamitsu Makino, Hirofumi Kan. Uncooled InAs0.09Sb0.91photoconductors with cutoff wavelength extended to 11.5 μm[J]. 光电子快报(英文版), 2015, 11(5): 352.

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