Uncooled InAs<sub>0.09</sub>Sb<sub>0.91</sub>photoconductors with cutoff wavelength extended to 11.5 μm

GAO Yu-zhu; GONG Xiu-ying; ZHOU Ran; LI Ji-jun; FENG Yan-bin; Takamitsu Makino; Hirofumi Kan

doi:doi:10.1007/s11801-015-5122-y

光电子快报（英文版）, 2015, 11 (5): 352, Published Online: Oct. 12, 2017

Uncooled InAs_0.09Sb_0.91photoconductors with cutoff wavelength extended to 11.5 μm

论文大纲

GAO Yu-zhu ^1,*GONG Xiu-ying ¹ZHOU Ran ¹LI Ji-jun ²FENG Yan-bin ²Takamitsu Makino ³Hirofumi Kan ³

Author Affiliations

¹ College of Electronics and Information Engineering, Tongji University, Shanghai 201804, China

² Huaxing Infrared Device Company, Xi’an 712099, China

³ Hamamatsu Photonics K. K., 5000 Hirakuchi, Hamakita 434-8601, Japan

Abstract

Uncooled InAsSb photoconductors were fabricated. The photoconductors were based on InAs_0.09Sb_0.91and InAs_0.09Sb_0.91thick epilayers grown on InAs substrates by melt epitaxy (ME). Ge immersion lenses were set on the photoconductors. The cutoff wavelength of InAs_0.09Sb_0.91detectors is obviously extended to 11.5 μm, and that of InAs_0.09Sb_0.95detectors is 8.3 μm. At room temperature, the peak detectivity of D_λp^* at wavelength of 6.8 μm and modulation frequency of 1 200 Hz is 1.08×10⁹cm·Hz^1/2·W^-1 for InAs_0.09Sb_0.91photoconductors, the detectivity D^* at wavelength of 9 μm is 7.56×10⁸cm·Hz^1/2·W^-1, and that at 11 μm is 3.92×10⁸cm·Hz^1/2·W^-1. The detectivity of InAs_0.09Sb_0.91detectors at the wavelengths longer than 9 μm is about one order of magnitude higher than that of InAs_0.09Sb_0.95detectors, which rises from the increase of arsenic (As) composition in InAs_0.09Sb_0.91materials.

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GAO Yu-zhu, GONG Xiu-ying, ZHOU Ran, LI Ji-jun, FENG Yan-bin, Takamitsu Makino, Hirofumi Kan. Uncooled InAs_0.09Sb_0.91photoconductors with cutoff wavelength extended to 11.5 μm[J]. 光电子快报（英文版）, 2015, 11(5): 352.

Uncooled InAs_0.09Sb_0.91photoconductors with cutoff wavelength extended to 11.5 μm

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