半导体光电, 2012, 33 (3): 367, 网络出版: 2012-06-25  

生长压力对GaN材料光学与电学性能的影响

Influence of Growth Pressure on the Optical and Electrical Properties of GaN Films
作者单位
1 北京工业大学 电子信息与控制工程学院,北京 100124
2 中国科学院苏州纳米技术与纳米仿生研究所,江苏 苏州215123
引用该论文

冯雷, 韩军, 邢艳辉, 范亚明. 生长压力对GaN材料光学与电学性能的影响[J]. 半导体光电, 2012, 33(3): 367.

FENG Lei, HAN Jun, XING Yanhui, FAN Yaming. Influence of Growth Pressure on the Optical and Electrical Properties of GaN Films[J]. Semiconductor Optoelectronics, 2012, 33(3): 367.

参考文献

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[3] Yang H,Chen L, Zhang S, et al. Material growth and device fabrication of GaN-based blue-violet laser diodes[J].Chinese Journal of Semiconductors,2005, 26(2):414-417.

[4] Armitage R,Hong W, Yang Q, et al.Contributions from gallium vacancies and carbon-related defects to the "yellow luminescence" in GaN[J].Appl. Phys. Lett.,2003,82(20):3457-3459.

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[8] Zhao D G,Yang H, Zhu J J, et al. Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films[J]. Appl. Phys. Lett.,2006, 89(11):112106.

[9] Farvacque J L,Bougrioua Z, Moerman I. Free-carrier mobility in GaN in the presence of dislocation walls[J]. Phys. Review B,2001,63(11):115202.

冯雷, 韩军, 邢艳辉, 范亚明. 生长压力对GaN材料光学与电学性能的影响[J]. 半导体光电, 2012, 33(3): 367. FENG Lei, HAN Jun, XING Yanhui, FAN Yaming. Influence of Growth Pressure on the Optical and Electrical Properties of GaN Films[J]. Semiconductor Optoelectronics, 2012, 33(3): 367.

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