准分子激光技术实现聚偏氟乙烯表面导电图形化研究

刘莹; 蒋毅坚

doi:doi:10.3788/cjl201138.0903001

中国激光, 2011, 38 (9): 0903001, 网络出版: 2011-08-19

准分子激光技术实现聚偏氟乙烯表面导电图形化研究

Patterned Organic Semiconductor Poly (Vinylidene Fluoride) Surfaces Using KrF Excimer Laser Treatment

论文大纲

刘莹 ^*蒋毅坚

作者单位

北京工业大学激光工程研究院, 北京 100124

准分子激光导电层图形化聚偏氟乙烯直写刻蚀 excimer laser patterned conducting layer ploy (vinylidene fluoride) direct etching technique

摘要

设计了采用准分子激光技术实现聚偏氟乙烯(PVDF)表面导电层图形化的制备方案。根据刻蚀缺陷为导电层活性中心的结论，利用刻蚀线构造图形控制导电层的扩展路径，再在光学掩模的协助下对导电层扩展外形进行限制，实现了PVDF表面多种导电图形的制备。实验结果表明，刻蚀缺陷不仅起到活性中心的作用，同时对导电区域进行了有效分割；掩模起到了对激光辐照区域限制的作用，进而实现了对导电层生长区域外形的控制。采用扫描电镜沿导电层的扩展方向对不同位置的导电层的微观形貌进行观察，提出导电层的形成扩展机理。为PVDF基电子器件的开发提供可能，为各种类型导电高分子聚合物材料表面快速图形化制备提供技术指导和实验基础。

Abstract

We describe a novel procedure for fabricating conductive patterns on polyvinylidene fluoride (PVDF) substrates using KrF excimer laser treatment. Based on the etching defects which act active centre for conducting layer, the outline of the patterns formed by etching lines is created on PVDF surfaces via a 248 nm excimer laser directwriting optical system; the semiconducting layer can be induced along the selective direction, so that various patterned conductive surface is obtained via 248 nm laser irradiation. The results show that the etching defects not only play the active centres but also effectively separate the conducting layer; using the mask to limit the area of laser irradiation so that it controls the outline of conducting layer. Formation mechanism for conducting layer is proposed by the SEM results at different positions of conducting layer along its spreading direction. The paper will be possible to provide guidance for the conducting PVDF based electronic devices, and patterning other conducting polymer by laser techniques.

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刘莹, 蒋毅坚. 准分子激光技术实现聚偏氟乙烯表面导电图形化研究[J]. 中国激光, 2011, 38(9): 0903001. Liu Ying, Jiang Yijian. Patterned Organic Semiconductor Poly (Vinylidene Fluoride) Surfaces Using KrF Excimer Laser Treatment[J]. Chinese Journal of Lasers, 2011, 38(9): 0903001.

准分子激光技术实现聚偏氟乙烯表面导电图形化研究

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