光学学报, 2013, 33 (6): 0623002, 网络出版: 2013-05-14   

蓝光发光二极管的响应特性

Response Characteristic of Blue Light-Emitting Diodes
作者单位
1 华南师范大学光电子材料与技术研究所, 广东 广州 510631
2 广东省工业技术研究院, 广东 广州 510651
摘要
利用方波脉冲调制和正弦波调制方法对自生长台阶形的蓝光发光二极管(LED)进行脉冲响应特性及调制带宽的测量分析;并利用APSYS软件计算了此种台阶形蓝光LED的能带图,计算表明,台阶形导带带阶提高了43 meV,价带带阶下降了36 meV。这一结果说明:采用台阶形电子阻挡层(EBL)的结构设计,有利于提高LED的发光功率和响应特性,这一性能的提高主要是由于更高的有源区载流子注入密度,进而提升有源区的电子空穴辐射复合率。
Abstract
The impulse response characteristics and modulation bandwidth of blue light-emitting diode with a special-designed AlGaN staircase electron blocking layer are investiggated by using square wave pulse and sine wave modulation methods. And the energy band diagrams of the blue light-emitting diode (LED) with this special-designed staircase electron blocking layer have been numerically investigated using the APSYS simulation software. The simulation shows that ΔEc increases 43 meV and ΔEv decreases 36 meV. The results show that blue light-emitting diode with a special-designed AlGaN staircase electron blocking layer has better light output power and response performance. The superior performance can be attributed to higher carrier injection density of the active region, which improves the electron/hole radiative recombination rate.
参考文献

[1] 钱敏华, 林燕丹, 孙耀杰. 基于光电热寿命理论的LED寿命预测模型[J]. 光学学报, 2012, 32(8): 0823001

    Qian Minhua, Lin Yandan, Sun Yaojie. Photo-electro-thermal-life theory [J]. Acta Optica Sinica, 2012, 32(8): 0823001

[2] 李荣玲, 汤婵娟, 王源泉 等. 基于副载波复用的多输入单输出正交频分复用LED可见光通信系统[J]. 中国激光, 2012, 39(11): 1105001

    Li Rongling, Tang Chanjuan, Wang Yuanquan et al.. A MISM-OFDM visible light communication system using LED based on subcarrier multiplexing [J]. Chinese J. Lasers, 2012, 39(11): 1105001

[3] 张建昆, 杨宇, 陈弘达. 室内可见光通信调制方法分析[J]. 中国激光, 2011, 38(4): 0405003

    Zhang Jiankun, Yang Yu, Chen Hongda. Modulation scheme analysis of indoor visible light communications [J]. Chinese J. Lasers, 2011, 38(4): 0405003

[4] J. W. Shi, J. K. Sheu, C. H. Chen et al.. High speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures [J]. IEEE Eelectron Device Letters, 2008, 29(2): 158~160

[5] Satoru Kato, Osamu Fujishima, Takahiro Kozawa et al.. High speed GaN-based green LED for POF [J]. R&D. Review of Toyota CRDL, 2005, 40(2): 7~10

[6] J. W. Shi, J. K. Sheu, C. K. Wang et al.. Linear cascade arrays of GaN-based green light-emitting diodes for high-speed and high-power performance [J]. IEEE Photon. Technol. Lett., 2007, 19(18): 1368\~1370

[7] R. H. Saul. Recent advances in the performance and reliability of InGaAsP LED′s for lightwave communication systems [J]. IEEE Trans. Electron. Devices, 1983, 30(4): 285\~295

[8] S. H. Han, D. Y. Lee, S. J. Lee et al.. Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes [J]. Appl. Phys. Lett., 2009, 94(23): 231123

[9] Ning Zhang, Zhe Liu, Tongbo Wei et al.. Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes [J]. Appl. Phys. Lett., 2012, 100(5): 053504

[10] W. Gtz, N. M. Johnson, C. Chen et al.. Activation energies of Si donors in GaN [J]. Appl. Phys. Lett., 1996, 68(22): 3144\~3146

[11] Shooujinn Chang, Shengfu Yu, Rayming Lin et al.. InGaN-based light-emitting diodes with an AlGaN staircase electron blocking layer [J]. IEEE Photon. Technol. Lett., 2012, 24(19): 1737~1740

[12] Ministry of Electronic Industry Standard of the People′s Republic of China SJ2658.10-86 The Testing Method of Semiconductor Infrared Light Emitting Diode SJ2658.10-86 [S]. Beijing: China Standard Press,1986

[13] China Optical and Optoelectronics Manufactures Association SJ/T 11394-2009 Measure Methods of Semiconductor Light Emitting Diodes SJ/T 11394-2009 [S]. Beijing: China Standard Press, 2009

[14] Yunyan Zhang, Guangrui Yao. Performance enhancement of blue light-emitting diodes with AlGaN barriers and a special designed electron-blocking layer [J]. J. Appl. Phys., 2011, 110(9): 093104

[15] E. F. Schubert. Light-emitting Diodes (second edition) [M]. Cambridge: Cambridge University Press, 2006. 397~399

[16] R. Wirth, B. Mayer, S. Kugler et al.. Fast LEDs for polymer optical fiber communication at 650 nm [C]. SPIE, 2005, 6013: 60130F

苏晨, 陈贵楚, 郑树文, 贺龙飞, 皮辉, 许毅钦, 童金辉, 范广涵. 蓝光发光二极管的响应特性[J]. 光学学报, 2013, 33(6): 0623002. Su Chen, Chen Guichu, Zheng Shuwen, He Longfei, Pi Hui, Xu Yiqin, Tong Jinhui, Fan Ganghan. Response Characteristic of Blue Light-Emitting Diodes[J]. Acta Optica Sinica, 2013, 33(6): 0623002.

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