碲镉汞APD平面型PIN结构仿真设计
Device design of planner PIN HgCdTe avalanche photodiode
1 Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai200083, China
2 University of Chinese Academy of Sciences, Beijing100049, China
图 & 表
图 1. 含3对BSF/InGaAsP/BSF双异质结结构样品示意图
Fig. 1. Cross-section of MOVPE stack containing three BSF/InGaAsP/BSF DHs.
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图 2. InGaAsP/InGaAs双结太阳电池结构示意图
Fig. 2. Cross-section of the InGaAsP/InGaAs double-junction solar cell structure.
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图 3. InP和InAlAs背场双异质结的元素深度剖析（a）和荧光发光衰减曲线（b）
Fig. 3. Element profiles (a) and PL decay curves (b) for InP-barrier and InAlAs-barrier DH1s.
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图 4. InP双异质结（a）和InAlAs双异质结（b）的整体SIMS测试结果
Fig. 4. Overall SIMS results of (a) InP-barrier DH stack and (b) InAlAs-barrier DH stack.
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图 5. InP双异质结（a）和InAlAs双异质结（b）的荧光发光衰减曲线
Fig. 5. PL decay curves of (a) InP-barrier DHs and (b) InAlAs-barrier DHs.
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图 6. InP双异质结（a）和InAlAs双异质结（b）的稳态荧光发光曲线。标*的微弱发光峰与背场相关
Fig. 6. Steady-state PL of (a) InP-barrier DHs and (b) InAlAs-barrier DHs. Weak peaks marked by asteroids in DH1 and DH2 are related to the spacers.
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图 7. 采用InP和InAlAs背场的InGaAsP/InGaAs双结电池光照J-V曲线（a）和量子效率曲线（b）
Fig. 7. (a) Light J-V and (b) spectra response curves for InGaAsP/InGaAs solar cells using InP and InAlAs BSF layers
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图 8. 采用5对InP/InAlAs超晶格背场的InGaAsP/InGaAs双结电池光照J-V曲线
Fig. 8. Light J-V for InGaAsP/InGaAs DJSC using 5-period InP/InAlAs SL BSF layer.
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表 1文献报道的InGaAsP/InGaAs双结电池电性能
Table1. Previous reported results for InGaAsP/InGaAs DJSC
| Reference | Method | Bandgap | Illumination | Jsc (mA/cm2) | Voc (mV) | Woc (mV) |
|---|
| Oshima [2] | MBE | 1.0/0.71 | AM1.5G | 13.1 | 570 | 1140 | | Wu [3] | MBE | 1.05/0.73 | AM1.5G | 16.1 | 830 | 950 | | Zhao [4] | MOVPE | 1.07/0.74 | AM1.5D | 10.2 | 977 | 833 |
|
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表 2采用公式（3）计算得到的背场/InGaAsP界面处的表面复合速率
Table2. Calculated surface recombination velocity at barrier/InGaAsP interface using Eq..（3）
| Barrier | m2 (m0) | m1 (m0) | ΔEc (meV) | S (cm/s) |
|---|
| InP | 0.08 | 0.047 | 230 | 5793 | | InAlAs | 0.075 | 0.047 | 460 | 0.738 |
|
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表 3双异质结的有效载流子寿命
Table3. The effective minority-carrier lifetime of the DHs
| (ns) | DH1 | DH2 | DH3 |
|---|
| InP-barrier | 70.0 | 36.5 | 35.2 | | InAlAs-barrier | 110.0 | 53.0 | 45.0 |
|
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Yu-Shun CHENG, Hui-Jun GUO, Hao LI, Lu CHEN, Chun LIN, Li HE. 碲镉汞APD平面型PIN结构仿真设计[J]. 红外与毫米波学报, 2020, 39(1): 6. Yu-Shun CHENG, Hui-Jun GUO, Hao LI, Lu CHEN, Chun LIN, Li HE. Device design of planner PIN HgCdTe avalanche photodiode[J]. Journal of Infrared and Millimeter Waves, 2020, 39(1): 6.
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