共振隧穿二极管近红外探测器的电流抑制方法研究

裴康明; 詹锋; 倪海桥; 董宇; 牛智川

doi:doi:10.3788/lop53.020402

激光与光电子学进展, 2016, 53 (2): 020402, 网络出版: 2016-01-25

共振隧穿二极管近红外探测器的电流抑制方法研究下载： 557次

Current Suppression of Resonant Tunneling Diode Photodetector Working at Near-Infrared Wavelengths

论文大纲

裴康明 ^1,2,*詹锋 ¹倪海桥 ²董宇 ²牛智川 ²

作者单位

¹ 广西大学有色金属及材料加工新技术教育部重点实验室, 广西南宁 530004

² 中国科学院半导体研究所半导体超晶格国家重点实验室, 北京 100084

探测器共振隧穿二极管本征电流有限元仿真双势垒结构 detectors resonant tunneling diode eigen current finite element simulation double barriers structure

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摘要

针对共振隧穿二极管近红外探测器焦平面阵列本征电流较大的问题，提出了一种通过对共振隧穿二极管近红外探测器双势垒结构(DBS)进行p 型掺杂来抑制电流的方法，并用有限元软件对探测器进行了模拟。研究了单势垒p 型掺杂、双势垒p 型掺杂、双势垒结构p 型掺杂及p 型掺杂浓度对探测器本征电流抑制效果的影响。模拟结果显示，对双势垒结构进行p 型掺杂后，探测器的隧穿峰值电流比非掺杂的双势垒结构的探测器的隧穿峰值电流小将近3个数量级。随着双势垒结构p 型掺杂浓度的增加，器件本征电流会相应地减小。对器件进行了制备以及测试，结果表明，将双势垒结构进行p 型掺杂，对探测器的本征电流有明显的抑制作用。

Abstract

Aiming at the problem of oversize eigen current of resonant tunneling diode photodetector focal plane array working at near-infrared wavelengths, a method that using p-doped type in double barriers structure (DBS) of resonant tunneling diode photodetector working at near- infrared wavelengths to suppress eigen current is presented. The current-voltage characteristics are simulated by finite element software. Effects of single barrier pdoped, double barriers p-doped，DBS p-doped and concentrations of p-doping on the eigen current suppression are researched. Simulation results show that the peak tunneling current of the detector with p-doped in DBS reduces about 3 orders of magnitude compared with that of the detector with undoped DBS. It is also found that the eigen current reduces with the increasing of the doping concentration of the DBS. The proposed device has been fabricated and tested. The results demonstrate that the eigen current is effectively suppressed when the DBS is doped in p-type.

参考文献

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裴康明, 詹锋, 倪海桥, 董宇, 牛智川. 共振隧穿二极管近红外探测器的电流抑制方法研究[J]. 激光与光电子学进展, 2016, 53(2): 020402. Pei Kangming, Zhan Feng, Ni Haiqiao, Dong Yu, Niu Zhichuan. Current Suppression of Resonant Tunneling Diode Photodetector Working at Near-Infrared Wavelengths[J]. Laser & Optoelectronics Progress, 2016, 53(2): 020402.

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