[1] HUANG J S, NGUYEN T, HSIN W, et al.. Reliability of etched-mesa buried-heterostructure semiconductor lasers ［J］. IEEE Trans. Dev. Mater. Relib., 2005, 5(4):665-674.

[2] HUANG J S, MIAO R S, LU H, et al.. Theoretical and experimental thermal analysis of inp ridge lasers on submounts and TO packages ［J］. IEEE Trans. Dev. Mater. Relib., 2007, 7(2):363-368.

[3] HUANG J S, OLSON T, ISIP E. Human-body-model electrostatic-discharge and electrical-overstress studies of buried-heterostructure semiconductor lasers ［J］. IEEE Trans. Dev. Mater. Relib., 2007, 7(3):453-461.

[4] HUANG J S, LU H. Size effect on ESD Threshold and degradation behavior of InP buried heterostructure semiconductor lasers ［J］. Open Appl. Phys. J., 2009, 2:5-10.

[5] 王淑娜， 张普， 熊玲玲， 等. 温度对高功率半导体激光器阵列“smile”的影响 ［J］. 光子学报, 2016, 45(5):7-12.

    WANG S N, ZHANG P, XIONG L L, et al.. Influence of temperature on “smile” in high power diode laser bars ［J］. Acta Photon. Sinica, 2016, 45(5):7-12. (in Chinese)

[6] 金伟， 李光慧， 陈熙， 等. 一体化半导体激光器的ANSYS热仿真及结构设计 ［J］. 光学 精密工程, 2016, 24(5):1080-1086.

    JIN W, LI G H, CHEN X, et al.. Structural design and ANSYS thermal simulation for semiconductor laser system ［J］. Opt. Precision Eng., 2016, 24(5):1080-1086. (in Chinese)

[7] KNAUER A, ERBERT G, STASKE R, et al.. High-power 808 nm lasers with a super-large optical cavity ［J］. Semicond. Sci. Technol., 2005, 20:621-624.

[8] BUGGE F, ZEIMER U, WENZEl H, et al.. Laser diodes with highly strained InGaAs MQWs and very narrow vertical far fields ［J］. Phys. Stat. Sol.(c), 2006, 3(3):423-426.

[9] CRUMP P, PIETRZAK A, BUGGE F, et al.. 975 nm high power diode lasers with high efficiency and narrow vertical far field enabled by low index quantum barriers ［J］. Appl. Phys. Lett., 2010, 96:131011-1-3.

[10] ABDULRAHMAN A M, ABDULLAH A, ABDELMAJID S. Waveguide design optimization for long wavelength semiconductor lasers with low threshold current and small beam divergence ［J］. J. Modern Phys., 2011, 2:225-230.

[11] 高树理. 半导体激光器和光纤的耦合 ［J］. 煤炭技术, 2010, 29(2):28-30.

    GAO S L. Coupling of semiconductor laser with fiber ［J］. Coal Technol., 2010, 29(2):28-30.

[12] GUO X, SCHUBERT E F. Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates ［J］. Appl. Phys. Lett., 2001, 78:3337-3339.

[13] PEARTON S J, ABERNATHY C R, PANISH M B, et al..Implant induced high resistivity regions in InP and In GaAs［J］. J. Appl. Phys, 1989, 66(2):656-662.

[14] FAN Z F, MOHAMMAD S N, KIM W, et al.. Very low resistance multilayer Ohmic contact to n-GaN ［J］. Appl. Phys. Lett., 1996, 68(12):1672-1674.

[15] 张晓磊， 薄报学， 张哲铭， 等. C-mount封装激光器热特性分析与热沉结构优化研究 ［J］. 发光学报, 2017, 38(7):891-896.

    ZHANG X L, BO B X, ZHANG Z M, et al.. Thermal characteristics analysis of C-mount sink package laser and optimization of heat sink structure ［J］. Chin. J. Lumin., 2017, 38(7):891-896. (in Chinese)

[16] 施敏, 伍国珏. 半导体器件物理 ［M］. 西安：西安交通大学出版社, 2008.

    SHI M, WU G J. Semicondudor Devices Physics ［M］. Xian: Xian Jiao Tong University Press, 2008. (in Chinese)

[17] MELANIE O, SWALES A. Capabilites and reliability of LEDs and laser diodes ［J］. Whats New in Electron., 2000, 20(6):1-5.