Effect of sample temperature on laser-induced semiconductor plasma spectroscopy

Yang Liu; Yue Tong; Suyu Li; Ying Wang; Anmin Chen; Mingxing Jin

doi:doi:10.3788/COL201614.123001

Chinese Optics Letters, 2016, 14 (12): 123001, Published Online: Aug. 2, 2018

Effect of sample temperature on laser-induced semiconductor plasma spectroscopy Download： 707次

Yang Liu ^1,2Yue Tong ³Suyu Li ^1,2Ying Wang ^1,2Anmin Chen ^1,2,*Mingxing Jin ^1,2,**

Author Affiliations

¹ Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China

² Jilin Provincial Key Laboratory of Applied Atomic and Molecular Spectroscopy (Jilin University), Changchun 130012, China

³ Aviation University of Air Force, Changchun 130021, China

Figures & Tables

Fig. 1. Schematic of the experimental setup. FL is a lens.

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Fig. 2. LIBS at 422.66 and 589.33 nm lines of the Ge wafer for sample temperatures of 25°C, 150°C, and 300°C, and laser pulse energies of 7.3 and 16 mJ.

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Fig. 3. Temperature dependence of the emission intensity of Ge at (a) 422.66 and (b) 589.33 nm with laser energies of 3.2, 7.3, 11.7, and 16.0 mJ.

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Fig. 4. LIBS at the 390.55 and 634.71 nm Si lines; the sample temperatures are 25°C, 150°C, and 300°C, and the laser pulse energies are 8.5 and 20.3 mJ.

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Fig. 5. Effect of the sample temperature on the emission intensity of the (a) 390.55 and (b) 634.71 nm lines of Si; the laser energies are 3.2, 8.5, and 20.3 mJ. Error bars correspond to the standard deviation of fifteen measurements of averaged values.

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Yang Liu, Yue Tong, Suyu Li, Ying Wang, Anmin Chen, Mingxing Jin. Effect of sample temperature on laser-induced semiconductor plasma spectroscopy[J]. Chinese Optics Letters, 2016, 14(12): 123001.

Effect of sample temperature on laser-induced semiconductor plasma spectroscopy Download： 707次

Fig. 1. Schematic of the experimental setup. FL is a lens.

Fig. 2. LIBS at 422.66 and 589.33 nm lines of the Ge wafer for sample temperatures of 25°C, 150°C, and 300°C, and laser pulse energies of 7.3 and 16 mJ.

Fig. 3. Temperature dependence of the emission intensity of Ge at (a) 422.66 and (b) 589.33 nm with laser energies of 3.2, 7.3, 11.7, and 16.0 mJ.

Fig. 4. LIBS at the 390.55 and 634.71 nm Si lines; the sample temperatures are 25°C, 150°C, and 300°C, and the laser pulse energies are 8.5 and 20.3 mJ.

Fig. 5. Effect of the sample temperature on the emission intensity of the (a) 390.55 and (b) 634.71 nm lines of Si; the laser energies are 3.2, 8.5, and 20.3 mJ. Error bars correspond to the standard deviation of fifteen measurements of averaged values.

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Effect of sample temperature on laser-induced semiconductor plasma spectroscopy Download： 707次

Fig. 1. Schematic of the experimental setup. FL is a lens.

Fig. 2. LIBS at 422.66 and 589.33 nm lines of the Ge wafer for sample temperatures of 25°C, 150°C, and 300°C, and laser pulse energies of 7.3 and 16 mJ.

Fig. 3. Temperature dependence of the emission intensity of Ge at (a) 422.66 and (b) 589.33 nm with laser energies of 3.2, 7.3, 11.7, and 16.0 mJ.

Fig. 4. LIBS at the 390.55 and 634.71 nm Si lines; the sample temperatures are 25°C, 150°C, and 300°C, and the laser pulse energies are 8.5 and 20.3 mJ.

Fig. 5. Effect of the sample temperature on the emission intensity of the (a) 390.55 and (b) 634.71 nm lines of Si; the laser energies are 3.2, 8.5, and 20.3 mJ. Error bars correspond to the standard deviation of fifteen measurements of averaged values.

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