在低真空及亚高温(200-300 ℃)下,通过热氧化法在Si单晶基底上合成了呈准直阵列的椎形结构的氧化铌(NbOx)非晶结构纳米薄膜,薄膜经热处理后室温下在可见光区具有很好的光致发光。实验研究了退火温度与发光强度规律,对铌氧化物纳米薄膜的光致发光(PL)机制进行了初步分析和讨论。变功率光致发光(PL)实验有力地支持了初步讨论结果。

Niobium oxide amorphous films were deposited on silicon substrates at temperatures ranging from 200-300 ℃ by heating a pure niobium foil in a rough vacuum. The films were amorphous in structure and with morphology of vertically aligned nanocolumniations. This structure after anealing is of interesting photoluminescence property in the visible light range. The curve of emission intensity with annealing temperature of films was given. The mechanism for this photoluminescence (PL) behavior of the amorphous niobium oxide films was also investigated and discussed;the changed power PL experiment having supported the result forcefully.