[1] Auston D H. Picosecond optoelectronic switching and gating in silicon[J]. Appl Phys Lett,1975,26(3):101-103.

[2] 袁建强,谢卫平,周良骥,等.光导开关研究进展及其在脉冲功率技术中的应用[J].强激光与粒子束,2008,20(1):171-176.(Yuan Jianqiang,Xie Weiping,Zhou Liangji,et al. Developments and applications of photoconductive semiconductor switches in pulsed power technology. High Power Laser and Particle Beams,2008,20(1):171-176)

[3] Nunnally W C. Critical component requirements for compact pulse power system architectures[J]. IEEE Transactions on Plasma Science,2005,33(4):1262-1267.

[4] Schoenberg J H,Burger J W,Tyo J S,et al. Ultra-wideband source using gallium arsenide photoconductive semiconductor switches[J]. IEEE Transactions on Plasma Science,1997,25(2):327-334.

[5] Loubriel G M,O’Malley M W,Zutavern F J. Toward pulsed power uses for photoconductive semiconductor switches: Closing switches[C]//Proc of 6th IEEE IPPC. 1987:145-148.

[6] Rosen A,Stabile P J,Zutavern F J,et al. 8.5 MW GaAs pulse biased switch optically controlled by 2-D laser diode arrays[J]. IEEE Photonics Technology Letters,1990,2(7):525-526.

[7] Zutavern F J,Armijo J C,Cameron S M,et al. Optically activated switches for low jitter pulsed power applications[C]//Proc of 14th IEEE IPPC. 2003:591-594.

[8] 袁建强,刘宏伟,刘金锋,等.50 kV半绝缘GaAs光导开关[J].强激光与粒子束,2009,21(5):783-786.(Yuan Jianqiang,Liu Hongwei,Liu Jinfeng,et al. 50 kV semi-insulating GaAs photoconductive semiconductor switch. High Power Laser and Particle Beams,2009,21(5):783-786)

[9] Zutavern F J,Baca A,Helgeson W D,et al. Optically controlled current filamentation in GaAs photoconductive semiconductor switches[C]//Proc of 9th IEEE IPPC. 1993:80-83.

[10] Zutavern F J,Loubriel G M,McLaughlin D L,et al. Electrical and optical properties of high gain GaAs switches[C]//Proc of SPIE. 1992,1632:152-159