短波红外InGaAs焦平面噪声特性

为研究铟镓砷焦平面的噪声特性，设计了两种不同吸收层掺杂浓度的InGaAs外延材料，采用标准工艺制备了平面型160×128元光敏芯片，并与相同结构的读出电路倒焊耦合形成160×128元焦平面，采用改变积分时间和改变器件温度的方法，测试焦平面的信号与噪声.通过研究不同材料参数、器件性能与焦平面噪声的关系，定量分析了短波红外InGaAs焦平面的噪声特性.结果表明，焦平面噪声主要来源于焦平面耦合噪声和探测器噪声，降低InGaAs外延材料吸收层的掺杂浓度，可以有效降低探测器电容，从而降低焦平面的耦合噪声；而探测器噪声由探测器暗电流和工作温度影响，该噪声在长积分时间下决定了焦平面的总噪声水平.实现低暗电流、低电容特性的光敏芯片是降低焦平面噪声的有效途径.

Abstract

In order to study the noise characteristics of InGaAs focal plane arrays (FPAs), the 160×128 FPAs with different absorption layer doping concentration coupled with the same read-out circuit structures were designed and prepared. The noise characteristics at different temperature and integral time were measured. By studying the relationship between different material parameters, device performance and focal plane noise, the noise characteristics of short-wave infrared InGaAs FPAs are analyzed quantitatively. The results show that the noise mainly comes from the coupling noise of the focal plane and the noise of the detector. The detector noise is influenced by the dark current and operating temperature of the detector, which determines the total noise level of the focal plane in the long integral time. To manufacture photodetectors with low dark current and low capacitance is an effective way to reduce the focal plane noise.

参考文献

[1] Li X, Gong H M, Fang J X, et al. The development of InGaAs Short Wavelength Infrared Focal Plane Arrays with high performance［J］. Infrared Physics & Technology, 2017, 80:112-119.

[2] SHAO Xiu-Mei, GONG Hai-Mei, LI Xue, et al. Developments of high performance short-wave infrared InGaAs focal plane detectors［J］. Infrared Technology(邵秀梅，龚海梅，李雪，等，高性能短波红外 InGaAs焦平面探测器研究进展，红外技术), 2016,38(8): 629-635.

[3] Andreev D S, Boltar K O, Vlasov P V, et al. Investigation of planar photodiodes of a focal plane array based on a heteroepitaxial InGaAs/InP structure［J］. Journal of Communications Technology & Electronics, 2016, 61(10):1220-1225.

[4] Rogalski A. Recent progress in infrared detector technologies［J］. Infrared Physics & Technology, 2011, 54(3): 136-154.

[5] Li C, Wang Y. Introduction and analysis of short-wave InGaAs infrared detectors［J］. Journal of Functional Materials and Devices, 2013，5:259-263.

[6] Singh A, Pal R. Performance of InGaAs short wave infrared avalanche photodetector for low flux imaging［J］. Applied Physics A, 2017, 123(11):701.

[7] Iakovleva N I, Boltar K O, Sednev M V, et al. Analysis of characteristics of photodetectors based on InGaAs heteroepitaxial structures for 3D imaging［J］. Journal of Communications Technology & Electronics, 2017, 62(9):1061-1065.

[8] Guellec F, Dubois S, De Borniol E, et al. A low-noise 15 μm pixel-pitch 640× 512 hybrid InGaAs image sensor for night vision［C］//Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII. International Society for Optics and Photonics, 2012, 8298: 82980C.

[9] Hood A D, MacDougal M H, Manzo J, et al. Large-format InGaAs focal plane arrays for SWIR imaging［C］//Infrared Technology and Applications Xxxviii. International Society for Optics and Photonics, 2012, 8353: 83530A.

[10] Coussement J, Rouvié, A, Oubensaid E H, et al. New developments on InGaAs focal plane array［C］// Infrared Technology & Applications XL. International Society for Optics and Photonics, 2014.

[11] Li X, Tang H J, Huang S L, et al. Study on 512×128 pixels InGaAs near infrared focal plane arrays［C］// SPIE Optical Engineering + Applications. International Society for Optics and Photonics, 2014.

[12] Yu C L, Li X, Yang B, et al. Noise characteristics analysis of short wave infrared InGaAs focal plane arrays［J］. Infrared Physics & Technology, 2017, 85:74-80.

[13] Li X, Huang S L, Chen Y, et al. Noise characteristics of short wavelength infrared InGaAs linear focal plane arrays［J］. Journal of Applied Physics, 2012, 112(6):013202-1.

于春蕾, 李雪, 邵秀梅, 黄松垒, 龚海梅. 短波红外InGaAs焦平面噪声特性[J]. 红外与毫米波学报, 2019, 38(4): 04528. YU Chun-Lei, LI Xue, SHAO Xiu-Mei, HUANG Song-Lei, GONG Hai-Mei. Noise characteristics of short wave infrared InGaAs focal plane arrays[J]. Journal of Infrared and Millimeter Waves, 2019, 38(4): 04528.

短波红外InGaAs焦平面噪声特性

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