发光学报, 2011, 32 (10): 1069, 网络出版: 2011-10-21
p层厚度对Si基GaN垂直结构LED出光的影响
Effects of The Thickness of p-type GaN on Light Extraction of GaN Based Vertical Light Emitting Diodes on Silicon Substrate
补充材料
陶喜霞, 王立, 刘彦松, 王光绪, 江风益. p层厚度对Si基GaN垂直结构LED出光的影响[J]. 发光学报, 2011, 32(10): 1069. TAO Xi-xia, WANG Li, LIU Yan-Song, WANG Guang-xu, JIANG Feng-yi. Effects of The Thickness of p-type GaN on Light Extraction of GaN Based Vertical Light Emitting Diodes on Silicon Substrate[J]. Chinese Journal of Luminescence, 2011, 32(10): 1069.