碲锌镉衬底表面在碲镉汞液相外延工艺中的热腐蚀效应
宋林伟, 吴军, 孔金丞, 李东升, 张阳, 李沛, 杨翔, 万志远, 黄元晋, 木胜. 碲锌镉衬底表面在碲镉汞液相外延工艺中的热腐蚀效应[J]. 红外与毫米波学报, 2018, 37(1): 92.
SONG Lin-Wei, WU Jun, KONG Jin-Cheng, LI Dong-Sheng, ZHANG Yang, LI Pei, YANG Xiang, WAN Zhi-Yuan, HUANG Yuan-Jin, MU Sheng. Thermal erosion effect to CZT substrate surface during LPE growth of HgCdTe process[J]. Journal of Infrared and Millimeter Waves, 2018, 37(1): 92.
[1] Lawson W D, Nielson S, Putley E H, et al. Preparation and properties of HgTe and mixed crystals of HgTe-CdTe [J]. J. Phys. Chem. Solids. 1959, 9:325-329.
[2] SUN Quan-Zhi, SUN Rui-Yun, WEI Yan-Feng, et al. Batch production technology of 50mm ×50mm HgCdTe LPE materials with high performance [J]. J. Infrared Millim.Waves, (孙权志, 孙瑞赟, 魏彦锋,等. 50 mm×50 mm高性能HgCdTe液相外延材料的批生产技术.红外与毫米波学报) 2007, 36(1), 49-53.
[3] WANG Han, HONG Jin, YUE Fang-Yu, et al. Optical homogeneity analysis of Hg1-xCdxTe epitaxial layers: How to circumvent the influence of impurity absorption bands [J]. Infrared Physics & Technology. 2017, 82:1-7.
[4] Sun C.H, Zhang P, Zhang T.N, et al. ZnS Thin Films Grown by Atomic Layer Deposition on GaAs and HgCdTe Substrates at Very Low Temperature [J]. Infrared Physics & Technology. 2017, 85:280-286.
[5] HUANG Gen-Sheng, CHEN Xin-Qiang, YANG Jian-Rong, et al. Growth and characterization of liquid phase epitaxy Hg1-xCdxTe films [J]. J. Infrared Millim.Waves, (黄根生, 陈新强, 杨建荣,等.碲镉汞液相外延薄膜生长技术与性能.红外与毫米波学报)2000,19(2), 145-148.
[6] Bensussan P, Tribllet P. 50 years of successful MCT research and production in France [J]. Proc. of SPIE. 2009, 72982N.
[7] Péré-Lapernea N, Rubaldoa L, Kerlain A, et al. 10 μm pitch design of HgCdTe diode array in Sofradir [J]. Proc. of SPIE. 2015, 9370.
[8] Reine M. B. History of HgCdTe infrared detectors at BAE Systems [J]. Proc. of SPIE. 2009, 72982S.
[9] Figgemeier H, Bruder M, Mahlein K. M, et al. Impact of critical processes on HgCdTe diode performance and yield [J]. Journal of Electronic Materials, 2003,32(7):588-591.
[10] Kinch M. A. 50 years of HgCdTe at Texas Instruments and Beyond [J]. Proc. of SPIE, 2009, 72982T.
[11] Tennant W. E, Arias J. M. HgCdTe at Teledyne [J]. Proc. of SPIE, 2009, 72982V.
[12] Bratt P. R, Johnson S. M, Rhiger D. R, et al. Historical perspectives on HgCdTe material and device development at Raytheon Vision Systems [J]. Proc. of SPIE. 2009, 72982U.
[14] Sheng F F, Yang J R, Sun S W, et al. Influence of Cd-rich Annealing on Defects in Te-rich CdZnTe Materials [J]. Journal of Electronic Materials. 2014, 43(7):2702-2708.
[15] Sheng F F, Zhou C H, Sun S W, et al. Influences of Te-rich and Cd-rich precipitates of CdZnTe substrates on the surface defects of HgCdTe liquid-phase epitaxy materials [J]. Journal of Electronic Materials. 2014, 43(5):1397-1402.
宋林伟, 吴军, 孔金丞, 李东升, 张阳, 李沛, 杨翔, 万志远, 黄元晋, 木胜. 碲锌镉衬底表面在碲镉汞液相外延工艺中的热腐蚀效应[J]. 红外与毫米波学报, 2018, 37(1): 92. SONG Lin-Wei, WU Jun, KONG Jin-Cheng, LI Dong-Sheng, ZHANG Yang, LI Pei, YANG Xiang, WAN Zhi-Yuan, HUANG Yuan-Jin, MU Sheng. Thermal erosion effect to CZT substrate surface during LPE growth of HgCdTe process[J]. Journal of Infrared and Millimeter Waves, 2018, 37(1): 92.