红外与毫米波学报, 2018, 37 (1): 92, 网络出版: 2018-03-14   

碲锌镉衬底表面在碲镉汞液相外延工艺中的热腐蚀效应

Thermal erosion effect to CZT substrate surface during LPE growth of HgCdTe process
作者单位
昆明物理研究所,云南 昆明 650223
引用该论文

宋林伟, 吴军, 孔金丞, 李东升, 张阳, 李沛, 杨翔, 万志远, 黄元晋, 木胜. 碲锌镉衬底表面在碲镉汞液相外延工艺中的热腐蚀效应[J]. 红外与毫米波学报, 2018, 37(1): 92.

SONG Lin-Wei, WU Jun, KONG Jin-Cheng, LI Dong-Sheng, ZHANG Yang, LI Pei, YANG Xiang, WAN Zhi-Yuan, HUANG Yuan-Jin, MU Sheng. Thermal erosion effect to CZT substrate surface during LPE growth of HgCdTe process[J]. Journal of Infrared and Millimeter Waves, 2018, 37(1): 92.

参考文献

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[3] WANG Han, HONG Jin, YUE Fang-Yu, et al. Optical homogeneity analysis of Hg1-xCdxTe epitaxial layers: How to circumvent the influence of impurity absorption bands [J]. Infrared Physics & Technology. 2017, 82:1-7.

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[5] HUANG Gen-Sheng, CHEN Xin-Qiang, YANG Jian-Rong, et al. Growth and characterization of liquid phase epitaxy Hg1-xCdxTe films [J]. J. Infrared Millim.Waves, (黄根生, 陈新强, 杨建荣,等.碲镉汞液相外延薄膜生长技术与性能.红外与毫米波学报)2000,19(2), 145-148.

[6] Bensussan P, Tribllet P. 50 years of successful MCT research and production in France [J]. Proc. of SPIE. 2009, 72982N.

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[9] Figgemeier H, Bruder M, Mahlein K. M, et al. Impact of critical processes on HgCdTe diode performance and yield [J]. Journal of Electronic Materials, 2003,32(7):588-591.

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[13] HU Wei-Da, LIANG Jian, YUE Fang-Yu, et al. Recent progress of subwavelength photon trapping HgCdTe infrared detector [J]. J. Infrared Millim.Waves, (胡伟达,梁健,越方禹,等. 新型亚波长陷光结构HgCdTe红外探测器研究进展. 红外与毫米波学报),2016, 35(1), 25-36.

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[15] Sheng F F, Zhou C H, Sun S W, et al. Influences of Te-rich and Cd-rich precipitates of CdZnTe substrates on the surface defects of HgCdTe liquid-phase epitaxy materials [J]. Journal of Electronic Materials. 2014, 43(5):1397-1402.

宋林伟, 吴军, 孔金丞, 李东升, 张阳, 李沛, 杨翔, 万志远, 黄元晋, 木胜. 碲锌镉衬底表面在碲镉汞液相外延工艺中的热腐蚀效应[J]. 红外与毫米波学报, 2018, 37(1): 92. SONG Lin-Wei, WU Jun, KONG Jin-Cheng, LI Dong-Sheng, ZHANG Yang, LI Pei, YANG Xiang, WAN Zhi-Yuan, HUANG Yuan-Jin, MU Sheng. Thermal erosion effect to CZT substrate surface during LPE growth of HgCdTe process[J]. Journal of Infrared and Millimeter Waves, 2018, 37(1): 92.

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