Photonics Research, 2015, 3 (5): 05000206, Published Online: Jan. 6, 2016  

Enhanced optical Kerr nonlinearity of MoS2 on silicon waveguides Download: 1050次

Author Affiliations
1 Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong, China
2 Department of Electronic and Information Engineering, Shenzhen Graduate School,Harbin Institute of Technology, Shenzhen, China
Abstract
A quasi-two-dimensional layer of MoS2 was placed on top of a silicon optical waveguide to form a MoS2–silicon hybrid structure. Chirped pulse self-phase modulation measurements were carried out to determine the optical Kerr nonlinearity of the structure. The observed increase in the spectral broadening of the optical pulses in the MoS2–silicon waveguide compared with the silicon waveguides indicated that the third-order nonlinear effect in MoS2 is about 2 orders of magnitude larger than that in silicon. The measurements show that MoS2 has an effective optical Kerr coefficient of about 1.1 × 10?16 m2∕W. This work reveals the potential application of MoS2 to enhance the nonlinearity of hybrid silicon optical devices.
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Linghai Liu, Ke Xu, Xi Wan, Jianbin Xu, Chi Yan Wong, Hon Ki Tsang. Enhanced optical Kerr nonlinearity of MoS2 on silicon waveguides[J]. Photonics Research, 2015, 3(5): 05000206.

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