红外与毫米波学报, 2014, 33 (5): 477, 网络出版: 2014-11-06
离子束刻蚀碲镉汞中转型宽度
Conductivity type conversion in ion-beam-milled HgCdTe
激光诱导电流 p型HgCdTe Ar+离子束刻蚀 转型宽度 laser beam induced current p-HgCdTe Ar+ ion-beam milling conductivity type conversion
摘要
用Ar+离子束在p型HgCdTe(碲镉汞)上刻蚀出不同体积的环孔, 利用激光诱导电流方法测试转型后的n区宽度.研究发现, 在相同的刻蚀条件下, n区宽度取决于材料的汞空位浓度和被刻蚀HgCdTe体积.当被刻蚀HgCdTe体积相同时, n区宽度随汞空位浓度的增加呈线性减小;当汞空位浓度一定时, n区宽度随被刻蚀HgCdTe体积的增加呈线性增加.
Abstract
After different loopholes are produced by Ar+ ion-beam in p-HgCdTe, width of n-type layer has been defined by the electron beam induced current measurement. It can be observed that under the same milling condition, the width of n-type layer depends on both of the mercury vacancy concentration and the volume of the milled-HgCdTe. Further study shows that the width of n-type layer linearly decreases with an increase of the mercury vacancy concentration if volume of the milled-HgCdTe is equal. Meanwhile, the width of n-type layer will linearly increases with volume of the milled-HgCdTe increasing if the mercury vacancy concentration is kept unchanged.
徐国庆, 刘向阳, 王仍, 储开慧, 汤亦聃, 乔辉, 贾嘉, 李向阳. 离子束刻蚀碲镉汞中转型宽度[J]. 红外与毫米波学报, 2014, 33(5): 477. XU Guo-Qing, LIU Xiang-Yang, WANG Reng, CHU Kai-Hui, TANG Yi-Dan, QIAO Hui, JIA Jia, LI Xiang-Yang. Conductivity type conversion in ion-beam-milled HgCdTe[J]. Journal of Infrared and Millimeter Waves, 2014, 33(5): 477.