离子束刻蚀碲镉汞中转型宽度

用Ar＋离子束在p型HgCdTe(碲镉汞)上刻蚀出不同体积的环孔, 利用激光诱导电流方法测试转型后的n区宽度.研究发现, 在相同的刻蚀条件下, n区宽度取决于材料的汞空位浓度和被刻蚀HgCdTe体积.当被刻蚀HgCdTe体积相同时, n区宽度随汞空位浓度的增加呈线性减小；当汞空位浓度一定时, n区宽度随被刻蚀HgCdTe体积的增加呈线性增加.

Abstract

After different loopholes are produced by Ar+ ion-beam in p-HgCdTe, width of n-type layer has been defined by the electron beam induced current measurement. It can be observed that under the same milling condition, the width of n-type layer depends on both of the mercury vacancy concentration and the volume of the milled-HgCdTe. Further study shows that the width of n-type layer linearly decreases with an increase of the mercury vacancy concentration if volume of the milled-HgCdTe is equal. Meanwhile, the width of n-type layer will linearly increases with volume of the milled-HgCdTe increasing if the mercury vacancy concentration is kept unchanged.

参考文献

[1] BAKER I M, CRIMES G J, PARSONS J E, et al. CdHgTe-CMOS hybrid focal plane arrays-a flexible solution for advanced infrared systems [J].SPIE,1994,2269: 636-647.

[2] AQARIDEN F, DREISKE P D, KINCH M A, et al. Development of molecular beam epitaxially grown Hg1-xCdxTe for high-density vertically-integrated photodiode-based focal plane arrays [J]. Journal of Electronic Materials,2007,36(8): 900-904.

[3] DREISKE P D. Development of two-color focal-plane arrays based on HDVIP [J]. Proc. of SPIE,2005,5783: 325-330.

[4] DSOUZA A I, STAPELBROEK M G, YONEYAMA C, et al. SWIR HgCdTe HDVIP detectors MTF monte carlo modeling and data [J]. Proc. of SPIE, 2010,7660: 76600Q1-76600Q6.

[5] IVANOV-OMSKII V I, MIRONOV K E, MYNBAEV K D, et al. Hg1-xCdxTe doping by ion-beam treatment [J]. Semicond. Sci. Technol,1993,8: 634-637.

[6] IZHNIN I I, IZHNIN A I, KURBANOV K R, et al. P-to-n ion beam milling conversion in specially doped CdxHg1-xTe [J]. SPIE,1993,2269: 636-647.

[7] HAAKENAASEN R, MOEN T, COLIN T, et al. Depth and lateral extension of ion milled pn junctions in CdxHg1-xTe from electron beam induced current measurements [J]. Journal of Applied Physics,2002,91(1): 427-432.

[8] BERCHENKO N N, BOGOBOYASHCHYY V V, IZHNIN I I, et al. Conductivity type conversion in p-CdxHg1-xTe [J]. Opto-Electronics Review, 2003, 11(2): 93-98.

[9] Yao Ying. Mechanism analysis of P-HgCdTe ion milling junction [J]. Infrared Technology ( 姚英. P 型HgCdTe 离子刻蚀成结机理分析. 红外技术), 2007,29(2): 71-75.

徐国庆, 刘向阳, 王仍, 储开慧, 汤亦聃, 乔辉, 贾嘉, 李向阳. 离子束刻蚀碲镉汞中转型宽度[J]. 红外与毫米波学报, 2014, 33(5): 477. XU Guo-Qing, LIU Xiang-Yang, WANG Reng, CHU Kai-Hui, TANG Yi-Dan, QIAO Hui, JIA Jia, LI Xiang-Yang. Conductivity type conversion in ion-beam-milled HgCdTe[J]. Journal of Infrared and Millimeter Waves, 2014, 33(5): 477.

离子束刻蚀碲镉汞中转型宽度

关于本站 Cookie 的使用提示

全站搜索

离子束刻蚀碲镉汞中转型宽度

相关论文

相关资讯

关于本站 Cookie 的使用提示

全站搜索