激光晶体的键合条件研究

键合晶体作为激光工作物质，可以有效地控制热负载，减小端面的变形和损伤，降低光束的波前畸变。基于键合面缝隙闭合理论，分析了激光晶体的键合条件，计算了Nd∶YAG、Nd∶YVO4和蓝宝石晶体在光胶时键合面处的哈梅克常数和表面能，讨论了这三种材料在制作键合晶体时需要满足的条件，对比了制作的难易程度。以YAG-Nd∶YAG晶体为例进行了光胶实验，验证了键合条件的合理性；对热处理后的YAG-Nd∶YAG键合晶体进行抽运光照射实验，证明了键合强度和键合稳定性满足实验要求。提出的晶体键合条件判断方法可以为键合晶体的选材和键合工艺的参数优化提供参考。

Abstract

As laser materials, bonding crystals have an efficient thermal management. They can decrease the deformation and fracture at the end face of crystals, and reduce wavefront distortion of laser. Based on the bonding interface gap closing theory, the bondability criterions of laser crystals are analyzed, the Hamaker constant and surface energy are calculated when Nd∶YAG, Nd∶YVO4 and sapphire are optical contacting, the bondability criterions for the three composite crystals are discussed, and the difficulty in crystal bonding is compared. Taking the YAG-Nd∶YAG crystal for example, the optical contacting experiment verifies the rationality of the bondability criterions, and the pump experiment for the bonding crystal after heat treatment proves that the bonding strength and the bonding stability fulfill the experimental requirements. The method for judging crystal bondability criterions provides references for selecting bonding materials and optimizing bonding process parameters.

参考文献

[1] Haisma J, Spierings B A C M, Biermann U K P, et al. Diversity and feasibility of direct bonding: a survey of a dedicated optical technology [J]. Applied Optics, 1994, 33(7): 1154-1169.

[2] Lee H C, Meissner O R, Meissner H E. Characteristics of AFB interfaces of dissimilar crystal composites as components for solid state lasers[M]∥Jin G F, Li J Z. Laser metrology. Beijing: Science Press, 1998: 162-165.

[3] Lee H, Meissner H E, Meissner O R. Adhesive-free bond (AFB) CVD diamond/sapphire and CVD diamond/YAG crystal composites[C]. SPIE, 2006, 6216: 62160O.

[4] Steng l R, Mitani K, Lehman V, et al. Silicon wafer bonding: chemistry, elasto-mechanics and manufacturing[C]. IEEE SOS/SOI Technology Conference, Stateline, Nevada, 1989: 123-124.

[5] Tong Q Y, Gsele U, Thickness considerations in direct silicon wafer bonding [J]. Journal Electrochemical Society,1995, 142 (11): 3975-3979.

[6] Yu H H, Suo Z. A model of wafer bonding by elastic accommodation[J]. Journal of the Mechanics and Physics of Solids, 1998, 46(5): 829-844.

[7] Fan H, Xu J G, Sze K Y. Energy-rate consideration in wafer bonding[J]. Finite Elements in Analysis and Design, 2006, 42(8-9): 709-714.

[8] Gui C, Elwenspoek M, Tas N, et al. The effect of surface roughness on direct wafer bonding[J]. Journal of Applied Physics, 1999, 85(10): 7448-7454.

[9] Liao G, Shi T, Lin X, et al. Effect of surface characteristic on room-temperature silicon direct bonding[J]. Sensors and Actuators A, 2010, 158(2): 335-341.

[10] 马子文. 晶圆低温键合的理论及实验研究[D]. 武汉: 华中科技大学, 2007: 25.

Ma Ziwen. Experimental and theoretical study on low-temperature wafer bonding[D]. Wuhan: Huazhong University of Science and Technology, 2007: 25.

[11] Israelachvili J N. Intermolecular and surface forces[M]. 3rd edition. New York: Academic Press, 2011: 277.

[12] Lifshitz E M. The theory of molecular attractive forces between solids[J]. Soviet Physics, 1956, 2(1): 73-83.

[13] Bergstrm L. Hamaker constants of inorganic materials[J]. Advances in Colloid and Interface Science, 1997, 70: 125-169.

[14] Hurrell J P, Porto S P, Chang I F, et al. Optical phonons of yttrium aluminum garnet [J]. Physical Review, 1968, 173(3): 851-856.

邹岩, 吴婷, 李之通, 惠勇凌, 姜梦华, 雷訇, 李强. 激光晶体的键合条件研究[J]. 中国激光, 2016, 43(10): 1001009. Zou Yan, Wu Ting, Li Zhitong, Hui Yongling, Jiang Menghua, Lei Hong, Li Qiang. Bondability Criterions of Laser Crystals[J]. Chinese Journal of Lasers, 2016, 43(10): 1001009.

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