不同形状量子阱的量子限制效应
[1] K.-K. Law, R. H. Yan, A. C. Gossard et al.. Electronic-field-induced absorption changes in triangular quantum wells grown by pulsed-beam molecular-beam-epitaxy technique. J. Appl. Phys., 1990, 67(10): 6461~6465
[2] T. Ishikawa, S. Nishimura, K. Tada. Quantum-confined stark effect in a parabolic potential quantum well. Japan J. Appl. Phys., 1990, 29(8): 1466~1473
[3] S. L. Chuang. Efficient band-structure calculations of strained quantum wells. Phys. Rev., 1991, 43(12): 9649~9661
[4] T. Ishikawa, J. E. Bowers. Band lineup and in-plane effective mass of InGaAsP or InGaAlAs on InP strained-layer quantum well. IEEE J. Quant. Electr., 1994, QE-30(2): 562~569
[5] 张哲民,陈维友,刘式墉 等. Effective-masses of hole in strained quantum wells. 海峡两岸及香港地区第三届中华光电子学术研讨会, 长春, 1996. 215~218
张哲民, 陈维友, 刘式墉, 黄德修. 不同形状量子阱的量子限制效应[J]. 中国激光, 1997, 24(8): 725. 张哲民, 陈维友, 刘式墉, 黄德修. Quantum Confinement Effect in Different shaped Quantum Wells[J]. Chinese Journal of Lasers, 1997, 24(8): 725.