Photonics Research, 2020, 8 (5): 05000750, Published Online: Apr. 26, 2020   

Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the “green gap” Download: 793次

Author Affiliations
1 Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
2 Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
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Chunyu Zhao, Chak Wah Tang, Billy Lai, Guanghui Cheng, Jiannong Wang, Kei May Lau. Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the “green gap”[J]. Photonics Research, 2020, 8(5): 05000750.

References

[1] S. Pimputkar, J. S. Speck, S. P. DenBaars, S. Nakamura. Prospects for LED lighting. Nat. Photonics, 2009, 3: 180-182.

[2] G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, E. Zanoni. Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies. J. Appl. Phys., 2013, 114: 071101.

[3] J. Cho, E. F. Schubert, J. K. Kim. Efficiency droop in light-emitting diodes: challenges and countermeasures. Laser Photonics Rev., 2013, 7: 408-421.

[4] R. Langer, J. Simon, V. Ortiz, N. T. Pelekanos, A. Barski, R. Andre, M. Godlewski. Giant electric fields in unstrained GaN single quantum wells. Appl. Phys. Lett., 1999, 74: 3827-3829.

[5] J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, C. Weisbuch. Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop. Phys. Rev. Lett., 2013, 110: 177406.

[6] M.-H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, Y. Park. Origin of efficiency droop in GaN-based light-emitting diodes. Appl. Phys. Lett., 2007, 91: 183507.

[7] F. Bernardini, V. Fiorentini, D. Vanderbilt. Spontaneous polarization and piezoelectric constants of III-V nitrides. Phys. Rev. B, 1997, 56: 10024-10027.

[8] F. Bernardini, V. Fiorentini. Spontaneous versus piezoelectric polarization in III-V nitrides: conceptual aspects and practical consequences. Phys. Status Solidi B, 1999, 216: 391-398.

[9] S. Nakamura. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes. Science, 1998, 281: 956-961.

[10] A. David, M. J. Grundmann. Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes. Appl. Phys. Lett., 2010, 97: 033501.

[11] W. Lv, L. Wang, L. Wang, Y. Xing, D. Yang, Z. Hao, Y. Luo. InGaN quantum dot green light-emitting diodes with negligible blue shift of electroluminescence peak wavelength. Appl. Phys. Express, 2014, 7: 025203.

[12] S. Schulz, E. P. O’Reilly. Theory of reduced built-in polarization field in nitride-based quantum dots. Phys. Rev. B, 2010, 82: 033411.

[13] C. Adelmann, J. Simon, G. Feuillet, N. T. Pelekanos, B. Daudin, G. Fishman. Self-assembled InGaN quantum dots grown by molecular-beam epitaxy. Appl. Phys. Lett., 2000, 76: 1570-1572.

[14] J. Zhang, M. Hao, P. Li, S. J. Chua. InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant. Appl. Phys. Lett., 2002, 80: 485-487.

[15] K. Tachibana, T. Someya, Y. Arakawa. Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition. Appl. Phys. Lett., 1999, 74: 383-385.

[16] M. Zhang, P. Bhattacharya, W. Guo. InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop. Appl. Phys. Lett., 2010, 97: 011103.

[17] Y. Zhang, M. D. Sturge, K. Kash, B. P. van der Gaag, A. S. Gozdz, L. T. Florez, J. P. Harbison. Temperature dependence of luminescence efficiency, exciton transfer, and exciton localization in GaAs/AlxGa1-xAs quantum wires and quantum dots. Phys. Rev. B, 1995, 51: 13303-13314.

[18] D. J. Eaglesham, M. Cerullo. Dislocation-free Stranski-Krastanow growth of Ge on Si(100). Phys. Rev. Lett., 1990, 64: 1943-1946.

[19] J. Ma, X. L. Ji, G. H. Wang, X. C. Wei, H. X. Lu, X. Y. Yi, R. F. Duan, J. X. Wang, Y. P. Zeng, J. M. Li, F. H. Yang, C. Wang, G. Zou. Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots. Appl. Phys. Lett., 2012, 101: 131101.

[20] Y. K. Ee, H. P. Zhao, R. A. Arif, M. Jamil, N. Tansu. Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy. J. Cryst. Growth, 2008, 310: 2320-2325.

[21] G. E. Weng, W. R. Zhao, S. Q. Chen, H. Akiyama, Z. C. Li, J. P. Liu, B. P. Zhang. Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green. Nanoscale Res. Lett., 2015, 10: 31.

[22] P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, K. H. Ploog. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes. Nature, 2000, 406: 865-868.

[23] T. Lin, H. C. Kuo, X. D. Jiang, Z. C. Feng. Recombination pathways in green InGaN/GaN multiple quantum wells. Nanoscale Res. Lett., 2017, 12: 137.

[24] T. T. Zhu, F. Oehler, B. P. L. Reid, R. M. Emery, R. A. Taylor, M. J. Kappers, R. A. Oliver. Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy. Appl. Phys. Lett., 2013, 102: 251905.

[25] Y. Xing, D. Zhao, D. Jiang, Z. Liu, J. Zhu, P. Chen, J. Yang, F. Liang, S. Liu, L. Zhang. Carrier redistribution between two kinds of localized states in the InGaN/GaN quantum wells studied by photoluminescence. Nanoscale. Res. Lett., 2019, 14: 88.

[26] T. Lu, Z. Ma, C. Du, Y. Fang, H. Wu, Y. Jiang, L. Wang, L. Dai, H. Jia, W. Liu, H. Chen. Temperature-dependent photoluminescence in light-emitting diodes. Sci. Rep., 2014, 4: 6131.

[27] Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, S. Nakamura. Green semipolar (20) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth. Appl. Phys. Express, 2013, 6: 062102.

[28] Z. Liu, T. Wei, E. Guo, X. Yi, L. Wang, J. Wang, G. Wang, Y. Shi, I. Ferguson, J. Li. Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate. Appl. Phys. Lett., 2011, 99: 091104.

[29] K. Tachibana, T. Someya, R. Werner, A. Forchel, Y. Arakawa. MOCVD growth of a stacked InGaN quantum dot structure and its lasing oscillation at room temperature. Phys. E, 2000, 7: 944-948.

Chunyu Zhao, Chak Wah Tang, Billy Lai, Guanghui Cheng, Jiannong Wang, Kei May Lau. Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the “green gap”[J]. Photonics Research, 2020, 8(5): 05000750.

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