Chinese Optics Letters, 2016, 14 (1): 013101, Published Online: Aug. 6, 2018  

Near-infrared lateral photovoltaic effect of epitaxial LaTiO3+δ films under high pressure

Author Affiliations
1 State Key Laboratory of Petroleum Resources and Prospecting, China University of Petroleum, Beijing 102249, China
2 Beijing Key Laboratory of Optical Detection Technology for Oil and Gas, China University of Petroleum, Beijing 102249, China
Abstract
A lateral photovoltaic effect (LPE) is discovered in an LaTiO3+δ film epitaxially grown on a (100) SrTiO3 substrate. Under the illumination of a continuous 808 nm laser beam that is focused on the LaTiO3+δ film through the SrTiO3 substrate, the open-circuit photovoltage depends linearly on the illuminated position. The sensitivity of the LPE can be modified by the bias current. The LaTiO3+δ film shows a stable photoelectric property under the high pressure, up to 9 MPa. These results indicate that the LaTiO3+δ films can give rise to a potentially photoelectronic device for near-infrared position-sensitive detection in high-pressure environments.

Jianfeng Xi, Kun Zhao, Hao Ni, Wenfeng Xiang, Lizhi Xiao. Near-infrared lateral photovoltaic effect of epitaxial LaTiO3+δ films under high pressure[J]. Chinese Optics Letters, 2016, 14(1): 013101.

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