一种改进型金属-半导体-金属光电探测器数学模型
[1] . A device model for metal-semiconductor-metal photodetectors and its applications to optoelectronic integrated circuit simulation[J]. IEEE Trans. on ED., 1990, 37(9): 1964-1968.
[2] . K. Basu, M. Jamal Deen. A new approach to the design optimization of HEMT and HBT for maximum gain-bandwidth of MSM-based integrated photoreceiver and its noise performance at 1.55 μm[J]. IEEE Trans. on ED., 2000, 47(11): 2101-2109.
[3] . Characteristics analysis and SPICE circuit model of versatile photodiode[J]. Research & Progress of SSE, 2003, 23(4): 480-483.
[4] . . Modeling of InGaAs MSM photodetector for circuit-level simulation[J]. J. Lightwave Technol., 1996, 14(5): 716-723.
[5] . Equivalent circuit model of metal- semiconductor-metal photodiode[J]. Journal of Electronics, 1999, 21(4): 543-548.
[6] . Holger Bottcher, Detlef Kuhl, Frank Hieronymi et al.. Ultrafast semiinsulating InP:Fe-InGaAs:Fe-InP:Fe MSM photodetectors: modeling and performance[J]. IEEE J. Quantum Electron., 1992, 28(10): 2343-2357.
[7] M. Shur. Physics of Semiconductor Devices [M]. Prentice-Hall International. Inc.,1990. Chap.1
[9] . Modeling of MSM-PD[J]. Journal of Electronics, 1994, 16(3): 327-331.
[10] . Barnes, Ronald J. Lomax, George I. Haddad. Finite-element simulation of GaAs MESFET′s with lateral doping profiles and submicron gates[J]. IEEE Trans. on ED., 1976, 23(9): 1042-1048.
[12] . Koscielniak, Jean-Luc Pelouard, Robert M. Kolbas et al.. Dark current characteristics of GaAs metal-semiconductor-metal(MSM) photodetectors[J]. IEEE Trans. on ED., 1990, 37(7): 1623-1629.
[13] S. M. Sze. Physics of Semiconductor Device [M]. 2nd Edition. New York: Wiley, 1981. Chap.5
[14] . Photoelectric characteristics of GaAs MSM photodetector[J]. Research & Progress of SSE, 1992, 12(3): 225-229.
范辉, 陆雨田. 一种改进型金属-半导体-金属光电探测器数学模型[J]. 中国激光, 2007, 34(8): 1032. 范辉, 陆雨田. Improved Numerical Model of Metal-Semiconductor-Metal Photodetector[J]. Chinese Journal of Lasers, 2007, 34(8): 1032.