发光学报, 2012, 33 (4): 444, 网络出版: 2012-04-16   

标准CMOS工艺载流子注入型三端Si-LED的设计与研制

Design and Fabrication of Three-terminal Carrier-injection-type Si-LED with Standard CMOS Technology
作者单位
1 天津大学 电子信息工程学院, 天津 300072
2 天津工业大学 信息与通信工程学院, 天津 300161
引用该论文

韩磊, 张世林, 郭维廉, 毛陆虹, 谢生, 张兴杰, 谷晓. 标准CMOS工艺载流子注入型三端Si-LED的设计与研制[J]. 发光学报, 2012, 33(4): 444.

HAN Lei, ZHANG Shi-lin, GUO Wei-lian, MAO Lu-hong, XIE Sheng, ZHANG Xing-jie, GU Xiao. Design and Fabrication of Three-terminal Carrier-injection-type Si-LED with Standard CMOS Technology[J]. Chinese Journal of Luminescence, 2012, 33(4): 444.

参考文献

[1] Meindl J D, Chen Qiang, Davis J A. Limits on silicon nanoelectronics for terascale integration [J]. Science, 2001, 293(5537):2044-2049.

[2] Dong Zan, Wang Wei, Huang Beiju, et al. Silicon-based LED display array in standard CMOS technology [C]//7th IEEE International Conference on Group Ⅳ Photonics, Beijing, China: IEEE, 2010:332-334.

[3] Newman R. Visible light from a silicon p-n junction [J]. Phys. Rev., 1955, 100(2):700-703.

[4] Sze S M, Ng Kwok K. Physics of Semiconductor Devices [M]. Third edition. Hoboken, New Jersey: John Wiley & Sons, Inc., 2007:14-15.

[5] Snyman L W, Aharoni H, du Plessis M, et al. Increased efficiency of silicon light emitting diodes in a standard 1.2 μm complementary metal oxide semiconductor technology [J]. Opt. Eng., 1998, 37(7):2133-2141.

[6] du Plessis M, Aharoni H, Snyman L W. Two-and multi-terminal CMOS/BiCMOS Si LEDs [J]. Opt. Mater., 2005, 27(5):1059-1063.

[7] Snyman L W, Aharoni H, du Plessis M, et al. Planar light-emitting electro-optical interfaces in standard silicon complementary metal oxide semiconductor integrated circuitry [J]. Opt. Eng., 2002, 41(12):3230-3240.

[8] Snyman L W, du Plessis M, Aharoni H. Injection-avalanche based n+pn Si CMOS LED (450~750 nm) with two order increase in light emission intensity [J]. Jpn. J. Appl. Phys., 2007, 46(4B):2474-2480.

[9] Lee Hsiuchih, Liu Chengkuang. Si-based current-density-enhanced light emission and low-operating-voltage light-emitting/receiving designs [J]. Solid-State Electron., 2005, 49(7):1172-1178.

[10] Dong Zan, Wang Wei, Huang Beiju, et al. Low threshold voltage light-emitting diode in silicon-based standard CMOS technology [J]. Chin. Opt. Lett.(中国光学快报), 2011, 9(8):082301-1-4 (in English).

[11] Wang Wei, Huang Beiju, Dong Zan, et al. A low-voltage two-wavelength light emitter in standard CMOS technology [C]//7th IEEE International Conference on Group Ⅳ Photonics, Beijing, China: IEEE, 2010:111-113.

[12] Yang Guanghua, Mao Luhong, Huang Chunhong, et al. Design and analysis of a forked n-well and p-sub junction Si LED based on standard CMOS technology [J]. Chin. J. Lumin.(发光学报), 2010, 31(3):369-372 (in Chinese).

[13] Green M A, Zhao J H, Wang A H, et al. Efficient silicon light-emitting diodes [J]. Nature, 2001, 412(6849):805-808.

[14] Akil N, Kerns S E, Kerns D V, et al. A multimechanism model for photon generation by silicon junctions in avalanche breakdown [J]. IEEE Transactions on Electron Devices, 1999, 46(5):1022-1028.

[15] Tahchi M El, Nassar E, Mialhe P. Study and development of a silicon infrared diode operating under forward bias [J]. Microelectron. J., 2005, 36(3-6):260-263.

[16] Pavesi L. Silicon-based light sources for silicon integrated circuits [J]. Advances in Optical Technologies, 2008, 2008:416926-1-12.

[17] Huang Beiju, Zhang Xu, Wang Wei, et al. CMOS monolithic optoelectronic integrated circuit for on-chip optical interconnection [J]. Opt. Commun., 2011, 284(16-17):3924-3927.

韩磊, 张世林, 郭维廉, 毛陆虹, 谢生, 张兴杰, 谷晓. 标准CMOS工艺载流子注入型三端Si-LED的设计与研制[J]. 发光学报, 2012, 33(4): 444. HAN Lei, ZHANG Shi-lin, GUO Wei-lian, MAO Lu-hong, XIE Sheng, ZHANG Xing-jie, GU Xiao. Design and Fabrication of Three-terminal Carrier-injection-type Si-LED with Standard CMOS Technology[J]. Chinese Journal of Luminescence, 2012, 33(4): 444.

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