强激光与粒子束, 2005, 17 (1): 135, 网络出版: 2006-04-28   

100 kA微秒导通时间等离子体断路开关研究

Research of 100 kA microsecond-conduction-time plasma opening switch
作者单位
中国工程物理研究院,流体物理研究所,四川,绵阳,621900
摘要
研制了最大导通电流约为100 kA的微秒导通时间等离子体断路开关,开展了该导通电流下的等离子体断路开关性能实验,得到的负载电流上升时间为54~76 ns,最高开关电压为1.38 MV,最高电压倍增系数达到4.9.建立了导通阶段开关区等离子体运动的二维雪耙模型,初步数值模拟结果表明,该模型对目前开展的实验有较好的预估能力.
Abstract
The experiments of microsecond conduction time plasma opening switch (POS) which has been operated at 100 kA current level are reported in this paper. As a result, the rise time of load current is between 54 to 76 ns. The maximal POS voltage of 1.38 MV is obtained with the 200 nH inductive load, and a factor of voltage multiplication up to 4.9 is achieved. In addition, a 2D snowplow model of POS conduction phase has been developed. The sequence of snowplow fronts in POS conduction phase is obtained from the simulation. The primary results show that the model has well predictability.

陈林, 孙承纬, 姜巍, 王刚华, 吴守东, 姚斌, 李晔, 徐敏. 100 kA微秒导通时间等离子体断路开关研究[J]. 强激光与粒子束, 2005, 17(1): 135. CHEN Lin, SUN Cheng-wei, JIANG Wei, WANG Gang-hua, WU Shou-dong, YAO Bin, LI Ye, XU Min. Research of 100 kA microsecond-conduction-time plasma opening switch[J]. High Power Laser and Particle Beams, 2005, 17(1): 135.

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