提出了一种消除激光化学诱导液相腐蚀晶体取向影响的新方法——两步腐蚀法。激光化学液相两步腐蚀法实质上是加长非晶向方向图形的腐蚀时间,保证与晶向方向腐蚀程度一致。实验结果表明,晶体取向对激光化学诱导液相腐蚀图形有较大的影响；两步腐蚀法可以有效地消除晶体取向影响,得到需要的图形；与国内外普遍采用的表面抗蚀膜掩蔽和激光光强分布调节等方法相比,具有可以处理内部晶向影响,操作简单,设备要求低等特点,两步腐蚀法可以有效地克服常规方法的诸多弊端,达到消除晶向影响的目的,在特殊结构光电器件和光电集成中具有广泛的应用前景。

A new method, laserassisted wet twostep etching, which can wipe off the crystal tropism influence in laser induced wetchemical etching is proposed. The essential of this method is to lengthen the etching time in noncrystaltropism direction and assure the same etching degree as that in the crystaltropism direction. Theoretical analysis and experimental result show that the crystal tropism influences the etched image greatly; and the twostep method can wipe off the crystal tropism influence effectively; and also, compared with the adopted normally surface mask film and laser intensity distributing accommodation, the twostep etching method can deal with the inside crystal tropism influence, operate easily and the requirement for equipment is low. The laserassisted wet twostep etching can overcome the disadvantages of conventional ones, and wipe off the crystal tropism influence and is useful in the fabrication of specialstructured optoelectronic devices and optoelectronic integration.