光学学报, 2019, 39 (6): 0614002, 网络出版: 2019-06-17   

450 nm GaN基半导体激光器腔面反射率的优化 下载: 1446次

Optimization of Facet Reflectivity of 450-nm GaN-Based Semiconductor Lasers
杜维川 1,2康俊杰 1,2李弋 1,2谭昊 1,2周坤 1,2,*胡耀 1,2张亮 1,2王昭 1,2郭林辉 1,2高松信 1,2武德勇 1,2唐淳 1,2
作者单位
1 中国工程物理研究院高能激光重点实验室, 四川 绵阳 621900
2 中国工程物理研究院应用电子学研究所, 四川 绵阳 621900
引用该论文

杜维川, 康俊杰, 李弋, 谭昊, 周坤, 胡耀, 张亮, 王昭, 郭林辉, 高松信, 武德勇, 唐淳. 450 nm GaN基半导体激光器腔面反射率的优化[J]. 光学学报, 2019, 39(6): 0614002.

Weichuan Du, Junjie Kang, Yi Li, Hao Tan, Kun Zhou, Yao Hu, Liang Zhang, Zhao Wang, Linhui Guo, Songxin Gao, Deyong Wu, Chun Tang. Optimization of Facet Reflectivity of 450-nm GaN-Based Semiconductor Lasers[J]. Acta Optica Sinica, 2019, 39(6): 0614002.

参考文献

[1] Charash R, Kim-Chauveau H, Lamy J M, et al. Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding[J]. Applied Physics Letters, 2011, 98(20): 201112.

    Charash R, Kim-Chauveau H, Lamy J M, et al. Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding[J]. Applied Physics Letters, 2011, 98(20): 201112.

[2] Avramescu A, Lermer T, Müller J, et al. InGaN laser diodes with 50 mW output power emitting at 515 nm[J]. Applied Physics Letters, 2009, 95(7): 071103.

    Avramescu A, Lermer T, Müller J, et al. InGaN laser diodes with 50 mW output power emitting at 515 nm[J]. Applied Physics Letters, 2009, 95(7): 071103.

[3] Farrell R M, Haeger D A, Hsu P S, et al. Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes[J]. Applied Physics Letters, 2011, 99(17): 171115.

    Farrell R M, Haeger D A, Hsu P S, et al. Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes[J]. Applied Physics Letters, 2011, 99(17): 171115.

[4] NICHIA. Laser diode[EB/OL]. [ 2018- 12- 01]. . http://www.nichia.co.jp/en/product/laser.html

    NICHIA. Laser diode[EB/OL]. [ 2018- 12- 01]. . http://www.nichia.co.jp/en/product/laser.html

[5] Liu J P, Zhang L Q, Li D Y, et al. GaN-based blue laser diodes with 2.2 W of light output power under continuous-wave operation[J]. IEEE Photonics Technology Letters, 2017, 29(24): 2203-2206.

    Liu J P, Zhang L Q, Li D Y, et al. GaN-based blue laser diodes with 2.2 W of light output power under continuous-wave operation[J]. IEEE Photonics Technology Letters, 2017, 29(24): 2203-2206.

[6] Higashi T, Ogita S, Soda H, et al. Optimum asymmetric mirror facet structure for high-efficiency semiconductor lasers[J]. IEEE Journal of Quantum Electronics, 1993, 29(6): 1918-1923.

    Higashi T, Ogita S, Soda H, et al. Optimum asymmetric mirror facet structure for high-efficiency semiconductor lasers[J]. IEEE Journal of Quantum Electronics, 1993, 29(6): 1918-1923.

[7] Wang X Z, Crump P, Wenzel H, et al. Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers[J]. IEEE Journal of Quantum Electronics, 2010, 46(5): 658-665.

    Wang X Z, Crump P, Wenzel H, et al. Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers[J]. IEEE Journal of Quantum Electronics, 2010, 46(5): 658-665.

[8] Wenzel H, Crump P, Pietrzak A, et al. Theoretical and experimental investigations of the limits to the maximum output power of laser diodes[J]. New Journal of Physics, 2010, 12(8): 085007.

    Wenzel H, Crump P, Pietrzak A, et al. Theoretical and experimental investigations of the limits to the maximum output power of laser diodes[J]. New Journal of Physics, 2010, 12(8): 085007.

[9] Wenzel H, Crump P, Pietrzak A, et al. The analysis of factors limiting the maximum output power of broad-area laser diodes[J]. Optical and Quantum Electronics, 2009, 41(9): 645-652.

    Wenzel H, Crump P, Pietrzak A, et al. The analysis of factors limiting the maximum output power of broad-area laser diodes[J]. Optical and Quantum Electronics, 2009, 41(9): 645-652.

[10] Wenzel H. Basic aspects of high-power semiconductor laser simulation[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2013, 19(5): 1502913.

    Wenzel H. Basic aspects of high-power semiconductor laser simulation[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2013, 19(5): 1502913.

[11] Hao T, Song J, Liptak R, et al. Experimental verification of longitudinal spatial hole burning in high-power diode lasers[J]. Proceedings of SPIE, 2014, 9081: 90810U.

    Hao T, Song J, Liptak R, et al. Experimental verification of longitudinal spatial hole burning in high-power diode lasers[J]. Proceedings of SPIE, 2014, 9081: 90810U.

杜维川, 康俊杰, 李弋, 谭昊, 周坤, 胡耀, 张亮, 王昭, 郭林辉, 高松信, 武德勇, 唐淳. 450 nm GaN基半导体激光器腔面反射率的优化[J]. 光学学报, 2019, 39(6): 0614002. Weichuan Du, Junjie Kang, Yi Li, Hao Tan, Kun Zhou, Yao Hu, Liang Zhang, Zhao Wang, Linhui Guo, Songxin Gao, Deyong Wu, Chun Tang. Optimization of Facet Reflectivity of 450-nm GaN-Based Semiconductor Lasers[J]. Acta Optica Sinica, 2019, 39(6): 0614002.

本文已被 3 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!