光学学报, 2019, 39 (6): 0614002, 网络出版: 2019-06-17
450 nm GaN基半导体激光器腔面反射率的优化 下载: 1447次
Optimization of Facet Reflectivity of 450-nm GaN-Based Semiconductor Lasers
图 & 表
图 1. 不同工艺条件下制备的薄膜样品的光学性质。(a)透射率曲线;(b)光学常数;(c)膜厚与腔面反射率的关系
Fig. 1. Optical characteristics of film samples under different processing conditions. (a) Transmission curve; (b) optical constant; (c) film thickness versus facet reflectivity
图 2. 阈值电流密度与腔面反射率的关系图
Fig. 2. Relationship between threshold current density and facet reflectivity
图 3. 不同前腔面反射率下的微分量子效率
Fig. 3. Differential quantum efficiency versus front facet reflectivity
杜维川, 康俊杰, 李弋, 谭昊, 周坤, 胡耀, 张亮, 王昭, 郭林辉, 高松信, 武德勇, 唐淳. 450 nm GaN基半导体激光器腔面反射率的优化[J]. 光学学报, 2019, 39(6): 0614002. Weichuan Du, Junjie Kang, Yi Li, Hao Tan, Kun Zhou, Yao Hu, Liang Zhang, Zhao Wang, Linhui Guo, Songxin Gao, Deyong Wu, Chun Tang. Optimization of Facet Reflectivity of 450-nm GaN-Based Semiconductor Lasers[J]. Acta Optica Sinica, 2019, 39(6): 0614002.