25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C

Zhongkai Zhang; Zunren Lü; Xiaoguang Yang; Hongyu Chai; Lei Meng; Tao Yang

doi:doi:10.3788/COL202018.071401

Chinese Optics Letters, 2020, 18 (7): 071401, Published Online: May. 25, 2020

25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C Download： 614次

Zhongkai Zhang ^1,2Zunren Lü ^1,2,*Xiaoguang Yang ^1,2Hongyu Chai ^1,2Lei Meng ^1,2Tao Yang ^1,2,**

Author Affiliations

¹ Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

² Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Figures & Tables

Fig. 1. Schematic diagram of the InAs/GaAs QD lasers.

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Fig. 2. PL spectra of the one-layer and the eight-layer QDs samples. The inset shows the surface AFM image of the surface QD layer for the eight-layer QD sample.

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Fig. 3. P–I curves of the laser at different temperatures from 20°C to 70°C. The inset shows the logarithmic threshold current as a function of temperature.

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Fig. 4. Small signal frequency response curves of the InAs/GaAs QD laser, measured at different temperatures.

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Fig. 5. Eye diagrams of the InAs/GaAs QD laser at different temperatures.

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Zhongkai Zhang, Zunren Lü, Xiaoguang Yang, Hongyu Chai, Lei Meng, Tao Yang. 25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C[J]. Chinese Optics Letters, 2020, 18(7): 071401.

25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C Download： 614次

Fig. 1. Schematic diagram of the InAs/GaAs QD lasers.

Fig. 2. PL spectra of the one-layer and the eight-layer QDs samples. The inset shows the surface AFM image of the surface QD layer for the eight-layer QD sample.

Fig. 3. P–I curves of the laser at different temperatures from 20°C to 70°C. The inset shows the logarithmic threshold current as a function of temperature.

Fig. 4. Small signal frequency response curves of the InAs/GaAs QD laser, measured at different temperatures.

Fig. 5. Eye diagrams of the InAs/GaAs QD laser at different temperatures.

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25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C Download： 614次

Fig. 1. Schematic diagram of the InAs/GaAs QD lasers.

Fig. 2. PL spectra of the one-layer and the eight-layer QDs samples. The inset shows the surface AFM image of the surface QD layer for the eight-layer QD sample.

Fig. 3. P–I curves of the laser at different temperatures from 20°C to 70°C. The inset shows the logarithmic threshold current as a function of temperature.

Fig. 4. Small signal frequency response curves of the InAs/GaAs QD laser, measured at different temperatures.

Fig. 5. Eye diagrams of the InAs/GaAs QD laser at different temperatures.

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