波段外激光辐照PC型探测器的反常响应机制
[1] 许晓军,曾交龙,陆启生,等.1.06 μm激光对PC型HgCdTe探测器的破坏阈值研究[J].强激光与粒子束,1998,10(4):552-556.(Xu X J,Zeng J L,Lu Q S,et al.Research of damage thresholds of PC-type HgCdTe detector under CW YAG laser.High Power Laser and Particle Beams,1998,10(4):552-556)
[2] 陆启生,蒋志平,刘泽金,等.PC型HgCdTe探测器的记忆效应[J].红外与毫米波学报,1998,17(4):317-320.(Lu Q S,Jiang Z P,Liu Z J,et al.The memory effect of PC type HgCdTe detectors.J Infrared Millim Waves,1998,17(4):317-320)
[3] 钟海荣,刘天华,陆启生,等.激光对光电探测器的破坏机理研究综述[J].强激光与粒子束,2000,12(4):423-428.(Zhong H R,Liu T H,Lu Q S,et al.Review on the laser-induced damage mechanism study of photoelectric detectors.High Power Laser and Particle Beams,2000,12(4):423-428)
[4] 朱克学,张赟,李向阳,等.激光辐照对HgCdTe长波光导探测器性能的影响[J].激光与红外,2001,31(4):234-235.(Zhu K X,Zhang Y,Li X Y,et al.Effect of laser irradiation for the performance of LWIR HgCdTe PC detector.Laser and Infrared,2001,31(4):234-235)
[7] 沈学础.半导体光谱与光学性质(第二版)[M].北京:科学出版社,2002:409.(Shen X C.Semiconductor spectrum and optics property(secondly edition),Beijing:Science Press,2002:409)
[8] Seeger K.Semiconductor physics[M].Beijing:People Education Press,1980:443.
[9] Scott W.Electron mobility in Hg(1-x) CdxTe[J].J Appl Phys,1972,43(3):1055-1062.
[10] 褚君浩,王戌兴,汤定元.非抛物型能带半导体Hg1-xCdxTe的本征载流子浓度[J].红外研究,1983,2(4):241-249.(Chu H J,Wang R X,Tang D Y.Intrinsic carrier concentration in Hg1-xCdxTe semiconductors with non-parabolic band.Infrared Research,1983,2(4):241-249)
[11] 马丽芹,陆启生,杜少军,等.光导型光电探测器瞬变行为的仿真[J].中国激光,2004,31(3):343-346.(Ma L Q,Lu Q S,Du S J,et al.Imitation of the instantaneous change behaviors of photoconductive detectors.Chinese Journal of Lasers,2004,31(3):343-346)
马丽芹, 陆启生. 波段外激光辐照PC型探测器的反常响应机制[J]. 强激光与粒子束, 2006, 18(2): 201. 马丽芹, 陆启生. Abnormal responsive mechanism of photoconductive semiconductor detectors under off-band laser irradiation[J]. High Power Laser and Particle Beams, 2006, 18(2): 201.