强激光与粒子束, 2006, 18 (2): 201, 网络出版: 2006-10-19  

波段外激光辐照PC型探测器的反常响应机制

Abnormal responsive mechanism of photoconductive semiconductor detectors under off-band laser irradiation
作者单位
1 青岛科技大学,数理系,青岛,266042
2 国防科学技术大学,光电科学与工程学院,长沙,410073
摘要
提出了PC型半导体探测器对波段外激光辐照的热电子光电导响应机制.响应波段外激光辐照PC型半导体探测器时,探测器有响应且输出电压信号迅速增大,与波段内激光辐照时的响应规律截然不同,这是由光激发能带内热电子而引起的光电导现象.当较强功率的激光辐照时还应考虑热效应.依据该机制进行了模拟计算,计算结果表明当PC型HgCdTe探测器被波段外激光辐照时,热电子的产生使得电导率减小,进而导致探测器的电阻增大.
Abstract
参考文献

[1] 许晓军,曾交龙,陆启生,等.1.06 μm激光对PC型HgCdTe探测器的破坏阈值研究[J].强激光与粒子束,1998,10(4):552-556.(Xu X J,Zeng J L,Lu Q S,et al.Research of damage thresholds of PC-type HgCdTe detector under CW YAG laser.High Power Laser and Particle Beams,1998,10(4):552-556)

[2] 陆启生,蒋志平,刘泽金,等.PC型HgCdTe探测器的记忆效应[J].红外与毫米波学报,1998,17(4):317-320.(Lu Q S,Jiang Z P,Liu Z J,et al.The memory effect of PC type HgCdTe detectors.J Infrared Millim Waves,1998,17(4):317-320)

[3] 钟海荣,刘天华,陆启生,等.激光对光电探测器的破坏机理研究综述[J].强激光与粒子束,2000,12(4):423-428.(Zhong H R,Liu T H,Lu Q S,et al.Review on the laser-induced damage mechanism study of photoelectric detectors.High Power Laser and Particle Beams,2000,12(4):423-428)

[4] 朱克学,张赟,李向阳,等.激光辐照对HgCdTe长波光导探测器性能的影响[J].激光与红外,2001,31(4):234-235.(Zhu K X,Zhang Y,Li X Y,et al.Effect of laser irradiation for the performance of LWIR HgCdTe PC detector.Laser and Infrared,2001,31(4):234-235)

[5] 李修乾,程湘爱,王睿,等.波段外CW CO2激光辐照HgCdTe探测器热效应研究[J].中国激光,2003,30(12):1070-1074.(Li X Q,Cheng X A,Wang R,et al.Investigation of thermal effect of HgCdTe detector with irradiation by off-band CW CO2 laser.Chinese Journal of Lasers,2003,30(12):1070-1074)

[6] 李修乾,程湘爱,王睿,等.激光辐照PC型HgCdTe探测器的实验研究[J].强激光与粒子束,2003,15(1):40-44.(Li X Q,Cheng X A,Wang R,et al.Experimental study on the response of HgCdTe(PC) detector irradiation by laser.High Power Laser and Particle Beams,2003,15(1):40-44)

[7] 沈学础.半导体光谱与光学性质(第二版)[M].北京:科学出版社,2002:409.(Shen X C.Semiconductor spectrum and optics property(secondly edition),Beijing:Science Press,2002:409)

[8] Seeger K.Semiconductor physics[M].Beijing:People Education Press,1980:443.

[9] Scott W.Electron mobility in Hg(1-x) CdxTe[J].J Appl Phys,1972,43(3):1055-1062.

[10] 褚君浩,王戌兴,汤定元.非抛物型能带半导体Hg1-xCdxTe的本征载流子浓度[J].红外研究,1983,2(4):241-249.(Chu H J,Wang R X,Tang D Y.Intrinsic carrier concentration in Hg1-xCdxTe semiconductors with non-parabolic band.Infrared Research,1983,2(4):241-249)

[11] 马丽芹,陆启生,杜少军,等.光导型光电探测器瞬变行为的仿真[J].中国激光,2004,31(3):343-346.(Ma L Q,Lu Q S,Du S J,et al.Imitation of the instantaneous change behaviors of photoconductive detectors.Chinese Journal of Lasers,2004,31(3):343-346)

马丽芹, 陆启生. 波段外激光辐照PC型探测器的反常响应机制[J]. 强激光与粒子束, 2006, 18(2): 201. 马丽芹, 陆启生. Abnormal responsive mechanism of photoconductive semiconductor detectors under off-band laser irradiation[J]. High Power Laser and Particle Beams, 2006, 18(2): 201.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!