170 ps激光脉冲辐照可见光面阵Si-CCD的实验

蔡跃; 叶锡生; 马志亮; 王立君; 冯国斌; 陈林柱

光学精密工程, 2011, 19 (2): 457, 网络出版: 2011-03-30

170 ps激光脉冲辐照可见光面阵Si-CCD的实验

Experiment of 170 ps laser pulse irradiation effect on visible plane array Si-CCD

论文大纲

蔡跃 ^*叶锡生马志亮王立君冯国斌陈林柱

作者单位

西北核技术研究所激光与物质相互作用国家重点实验室，陕西西安 710024

激光辐照激光损伤 ps激光脉冲阈值 laser irradiation laser damage ps laser pulse Si-CCD Si-CCD threshold

摘要

开展了532 nm ps激光辐照面阵Si-CCD的实验研究，建立了532 nm，170 ps激光辐照Si-CCD效应实验测量系统，观察到了各种典型的干扰和损伤效应现象并测量了阈值。对破坏后的CCD 器件的微观结构进行了显微观察，并深入分析了各种典型实验现象和电路层面的损伤机理。开展了10 ns和150 fs激光对CCD探测器的辐照效应实验，并对不同脉宽激光与CCD相互作用阈值的关系进行了比较分析。实验结果表明：激光能量密度为10-8~10-3 J/cm2时，会干扰CCD成像；激光能量密度超过10-1 J/cm2时，则会出现CCD永久性损伤。

Abstract

A measurement system was established to study the laser pulse irradiation effects on a plane array Si-CCD at the wavelength of 532 nm and the pulse duration of 170 ps. Experiments on Si-CCD under picosecond laser irradiation were carried out,the typical experiment phenomena were observed and the corresponding energy density thresholds were measured. Furthermore,the microstructure of damaged CCD was observed，and the damage mechanism was analyzed. It was demonstrated that the most severe failures could result from the malfunction of CCD circuits. Experiments on a Si-CCD by laser pulses at the wavelength of 532 nm,800 nm and the pulse duration in 10 ns， 150 fs were carried out,respectively,then the thresholds with different pulse durations were measured and compared. Experimental results indicate that the Si-CCD is disturbed when the laser energy density is between 10-8-10-3 J/cm2,and the permanent damage of Si-CCD is observed when laser energy density is larger than 10-1 J/cm2.

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蔡跃, 叶锡生, 马志亮, 王立君, 冯国斌, 陈林柱. 170 ps激光脉冲辐照可见光面阵Si-CCD的实验[J]. 光学精密工程, 2011, 19(2): 457. CAI Yue, YE Xi-sheng, MA Zhi-liang, WANG Li-jun, FENG Guo-bin, CHEN Lin-zhu. Experiment of 170 ps laser pulse irradiation effect on visible plane array Si-CCD[J]. Optics and Precision Engineering, 2011, 19(2): 457.

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