Photoelectric Conversion Efficiency Enhanced by Tilting Monocrystalline Silicon Photovoltaic Devices
[1] Wolf M A.Proposal for impurity photovoltaic effect[J].Proc IRE,1960,48:1 246-1 249.
[2] Guttler G,Queisser H J.Impurity photovoltaic effect in silicon[J].Energy Conversion,1970,10:51-55.
[3] LI Jian-ming.Proton- implanted new type silicon material subjected to two-step furnace annealing[J].Nucl. Instrum. Methods B,1991,B59/60:1 053-1 055.
[4] LI Jian-ming.A p-n junction silicon device with enhanced photoelectric conversion capability[P].China Patent:91103787.X, 1991-11-13(in Chinese).
[5] Stein H J.Bonding and thermal stability of implanted hydrogen in silicon[J].J.Electron.Mater.,1975,4(1):159-174.
[6] Feijoo D,Chabal Y J,Christman S B.Silicon wafer bonding studied by infrared absorption spectroscopy[J].Appl.Phys.Lett., 1994,65(20):2 548-2 550.
[7] LI Jian-ming.Development of research on photovoltaic effect improved by ion implantation[J].Microfabrication Tech.,2003, 75(1):1-4.
[8] LI Jian-ming,CHONG Ming,YANG Li-qing,et al.A method of improving semiconductor photoelectric conversion device[P]. China Patent:03103590.6,2003-01-29(in Chinese).
[9] LI Yuan-jing.The processing of a p-n junction cell device[P].China Patent:89202565.4,1990-03-27(in Chinese).
[10] LI Jian-ming,CHONG Ming,ZHU Jian-cheng,et al.Response to“Comment on efficient nonconcentrating silicon solar cell” [J].Appl.Phys.Lett.,1993,62:851-852.
LI Jian-ming, CHONG Ming, XU Jia-dong, HU Chuan-xian, DUAN Xiao-feng, GAO Min, WANG Feng-lian. Photoelectric Conversion Efficiency Enhanced by Tilting Monocrystalline Silicon Photovoltaic Devices[J]. 半导体光子学与技术, 2004, 10(2): 101. LI Jian-ming, CHONG Ming, XU Jia-dong, HU Chuan-xian, DUAN Xiao-feng, GAO Min, WANG Feng-lian. Photoelectric Conversion Efficiency Enhanced by Tilting Monocrystalline Silicon Photovoltaic Devices[J]. Semiconductor Photonics and Technology, 2004, 10(2): 101.
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