The fluorescence of graphene oxide quantum dots (GOQDs) that are infiltrated into porous silicon (PSi) is investigated. By dropping activated GOQDs solution onto silanized PSi samples, GOQDs are successfully infiltrated into a PSi device. The results indicate that the intensity of the fluorescence of the GOQD-infiltrated multilayer with a high reflection band located at its fluorescence spectra scope is approximately double that of the single layer sample. This indicates that the multilayer GOQD-infiltrated PSi substrate is a suitable material for the preparation of sensitive photoluminescence biosensors.