方立民 1,2郝振东 1,**张亮亮 1吴昊 1[ ... ]张家骅 1,*
作者单位
摘要
1 中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室,吉林 长春 130022
2 中国科学院大学光电学院,北京 100037

宽带近红外荧光粉作为新型检测用近红外固态光源——近红外荧光粉转化型发光二极管(NIR pc-LED)的核心材料,在近年来受到研究人员的高度关注。利用高温固相法制备了Cr3+离子掺杂的δ-Sc4Zr3O12宽带近红外荧光粉。在蓝光激发下,其近红外发射位置位于810 nm,发射峰的半峰全宽约为175 nm。该宽带发射对应于两个发光子峰的叠加,两发射子峰的位置分别出现在795 nm和873 nm,这在荧光衰减曲线和温度特性的测试结果中得到了验证。利用光谱数据估算得到的材料晶体场强度为2.25。最后,探索了所制备的Sc4Zr3O12∶3%Cr3+近红外荧光粉在NIR pc-LED中的应用。

材料 荧光和发光材料 Sc4Zr3O12∶Cr3+荧光粉 高温固相法 宽带近红外荧光粉 
激光与光电子学进展
2021, 58(15): 1516008
Author Affiliations
Abstract
1 National Research Ogarev Mordovia State University, Saransk 430005, Mordovia, Russia
2 Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow 119991, Russia
Mechanisms of upconversion luminescence (UCL) of SrF2:Er phosphors corresponding to the G411/2I415/2, H29/2I415/2, F45/2I415/2, F47/2I415/2, H211/2I4<
190.7220 Upconversion 160.2540 Fluorescent and luminescent materials 
Chinese Optics Letters
2018, 16(9): 091901
Author Affiliations
Abstract
1 State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096, China
2 School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China
Microlasers based on high quality (Q) whispering-gallery mode (WGM) resonance are promising low threshold laser sources for bio-sensing and imaging applications. In this Letter, dye-doped polymer microspheres were fabricated by a controlling emulsion solvent evaporation method. WGM lasing with low threshold and high Q factors was realized in an individual microsphere under femtosecond laser pumping. The slight change of environmental relative humidity (RH) can be monitored by measuring the shift of the lasing modes at the exposure of water molecules, which demonstrates the sensitivity is as high as 6 pm/RH%. The results would offer an insight into employing microlasers as sensors.
140.2020 Diode lasers 160.2540 Fluorescent and luminescent materials 
Chinese Optics Letters
2018, 16(8): 081401
Author Affiliations
Abstract
1 Key Laboratory of Surface Functional Structure Manufacturing of Guangdong High Education Institutes, South China University of Technology, Guangzhou 510640, China
2 Optoelectronics Engineering Technology Research and Development Center, Foshan Nationstar Optoelectronics Co. Ltd., Foshan 528000, China
3 Department of Mechanical Engineering, University of California, Berkeley, California 94720, USA
4 Light Technology Institute, Karlsruhe Institute of Technology (KIT), Engesserstrasse 13, Karlsruhe 76131, Germany
Due to their good color rendering ability, white light-emitting diodes (WLEDs) with conventional phosphor and quantum dots (QDs) are gaining increasing attention. However, their optical and thermal performances are still limited especially for the ones with QDs-phosphor mixed nanocomposites. In this work, we propose a novel packaging scheme with horizontally layered QDs-phosphor nanocomposites to obtain an enhanced optical and thermal performance for WLEDs. Three different WLEDs, including QDs-phosphor mixed type, QDs-outside type, and QDs-inside type, were fabricated and compared. With 30 wt. % phosphor and 0.15 wt. % QDs nanocomposite, the QDs-outside type WLED shows a 21.8% increase of luminous efficiency, better color rendering ability, and a 27.0% decrease of the maximum nanocomposite temperature at 400 mA, compared with the mixed-type WLED. The reduced re-absorption between phosphor and QDs is responsible for the performance enhancement when they are separated. However, such reduced absorption can be traded off by the improper layered configuration, which is demonstrated by the worst performance of the QDs-inside type. Further, we demonstrate that the higher energy transfer efficiency between excitation light and nanocomposite in the QDs-outside type WLED is the key reason for its enhanced optical and thermal performance.
Nanomaterials Optical materials Semiconductor materials Fluorescent and luminescent materials Light-emitting diodes Microstructure fabrication 
Photonics Research
2018, 6(2): 02000090
Author Affiliations
Abstract
Pacific Light Technologies, 2828 SW Corbett Ave., Portland, Oregon 97201, USA
Quantum dots are finding increasing commercial success in LED applications. While they have been used for several years in remote off-chip architectures for display applications, it is shown for the first time to our knowledge that quantum dots can withstand the demands of the on-chip architecture and therefore are capable of being used as a direct phosphor replacement in both lighting and display applications. It is well known that, to achieve improved color metrics in lighting as well as increased gamut in display technologies, it is highly desirable to utilize a downconverter with a narrow emission linewidth as well as a precisely tunable peak. This paper will discuss the results of on-chip use of quantum dots in a lighting product, and explore the opportunities and practical limits for improvement of various lighting and display metrics by use of this unique downconverter technology.
Nanomaterials Semiconductor materials Fluorescent and luminescent materials Light-emitting diodes Quantum-well, -wire and -dot devices Colorimetry 
Photonics Research
2017, 5(2): 02000A13
Author Affiliations
Abstract
1 Key Lab of Optoelectronic Devices and Systems of Ministry of Education/Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
2 College of Information Engineering, Shenzhen University, Shenzhen 518060, China
We provide the first demonstration of pure red emission in the visible light region via three-photon excitation in monodisperse Na3ZrF7:Er nanoparticles (NPs) by using a laser operating in the telecommunication band. NPs of 22 nm in diameter are synthesized at 260°C by the thermal decomposition method. The experimental results reveal that the Na3ZrF7:Er NPs exhibit pure red emission in the visible region under 1480 nm laser excitation, and the emission intensity is significantly influenced by the Er3+ ion concentration. The decay times of the S3/24F415/2 and F9/24F415/2 transitions of the Er3+ ions at 540 and 655 nm, respectively, are reduced by increasing the Er3+ ion concentration in the 160.2540 Fluorescent and luminescent materials 160.4760 Optical properties 
Chinese Optics Letters
2017, 15(1): 011601
Author Affiliations
Abstract
1 Bialystok University of Technology, Bialystok 15-351, Poland
2 AGH University of Science and Technology, Krakow 30-059, Poland
Lanthanide-doped polymers are very attractive, since they can be used for luminescent optical fiber fabrications. This Letter presents the terbium-ions-doped poly(methyl methacrylate) fiber fabrication and spectroscopic characterization. The measured excited state (D45) lifetime of 0.741 ms confirms that a used organometallic can be used to obtain an intense luminescence in a polymeric fiber. The luminescence spectrum shape modification versus the fiber length is also investigated.
060.2280 Fiber design and fabrication 160.4890 Organic materials 160.2540 Fluorescent and luminescent materials 
Chinese Optics Letters
2017, 15(7): 070602
作者单位
摘要
1 上海理工大学光电信息与计算机工程学院, 上海 200093
2 华东师范大学精密光谱科学与技术国家重点实验室, 上海 200062
提出了一种新型的基于纳米颗粒上转换发光的防伪编码方法。该方法将MATLAB图像处理算法、支持向量机分类和径向基函数神经网络分类相结合, 通过分析纳米材料在980 nm抽运激光激发下产生的绿光和红光的上转换发光光谱信息, 及该纳米材料在防伪基底上的空间分布特征, 实现了一种具有高防伪度及建库与识别自动化的防伪方式。实验验证了所制作出的防伪标识难复制且其特征图样具有高稳定性, 鉴定准确率可达95.4%。
材料 荧光和发光材料 防伪 支持向量机 稀土纳米颗粒 
激光与光电子学进展
2017, 54(12): 121601
Author Affiliations
Abstract
School of Information Science and Engineering, Shandong University, Jinan 250100, China
ZnO films containing Er and Ge nanocrystals (nc-Ge) were synthesized and their photoluminescence (PL) properties were studied. Visible and near-infrared PL intensities are found to be greatly increased in nc-Ge-containing film. Er-related 1.54 μm emission has been investigated under several excitation conditions upon different kinds of Ge, Er codoped ZnO thin films. 1.54 μm PL enhancement accompanied by the appearance of nc-Ge implies a significant correlation between nc-Ge and PL emission of Er3+. The increased intensity of 1.54 μm in Ge:Er:ZnO film is considered to come from the joint effect of the local potential distortion around Er3+ and the possible energy transfer from nc-Ge to Er3+.
(160.2540) Fluorescent and luminescent materials (160.4236) Nanomaterials (160.5690) Rare-earth-doped materials (310.6860) Thin films optical properties (310.1860) Deposition and fabrication. 
Photonics Research
2017, 5(6): 06000567
Author Affiliations
Abstract
1 School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
2 Shagnhai Institute of Ceramics, Chinese Academy of Science, Shanghai 201899, China
3 Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
4 Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Science, Shanghai 201800, China
5 School of Physics Science and Engineering, Institute for Advanced Study, Tongji University, Shanghai 200092, China
6 Institute of Low Temperature and Structure Research PAS. Okolna 2 Street, Wroclaw 50-422, Poland
A highly transparent Eu3+-doped CaGdAlO4 (CGA) single crystal is grown by the floating zone method. The segregation coefficient, x ray diffraction, and x ray rocking curve are detected, and the results reveal that the single crystal is of high quality. The ff transitions of Eu3+ in the host lattice are discussed. The D05F72 emission transition at 621 nm (red light) is dominant over the D05F71 emission transitions at 591 and 599 nm (orange light), agreeing well with the random crystal environment of Eu3+ ions in a CGA crystal. The decay time of Eu:D05 is measured to be 1.02 ms. All the results show that the Eu:CGA crystal has good optical characterization and promises to be an excellent red- fluorescence material.
160.2540 Fluorescent and luminescent materials 300.6170 Spectra 260.1180 Crystal optics 160.4670 Optical materials 
Chinese Optics Letters
2016, 14(2): 021602

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