Photonics Research, 2016, 4 (3): 03000106, Published Online: Sep. 29, 2016
Optimizing the design of GaAs/AlGaAs thin-film waveguides for integrated mid-infrared sensors Download: 736次
Figures & Tables
Fig. 1. Cross section of the simulation model (50 μm × 50 μm ) comprising a GaAs/AlGaAs waveguide with a 6 μm AlGaAs layer (optical buffer), a 6 μm GaAs layer (actual waveguide), and a 20 μm thick GaAs substrate. The width (w ), the thickness of the absorbed layer (d l ) simulating an analyte, and the refractive index of the outer medium (n o ) were varied during the simulations.
Fig. 2. Dependence of the modal behavior on the width of the waveguide (A) for the amide region (1800 – 1600 cm − 1 ), and (B) for the carbohydrate region (1200 – 1000 cm − 1 ). (C) The fundamental guided TM 00 mode of a 5 μm wide waveguide, and (D) the first-order TM 01 mode of a 11 μm wide waveguide at a wavelength at 1700 cm − 1 are also illustrated.
Fig. 3. Exponential fit of the effective refractive index of a 13 μm wide waveguide at a wavelength at 1100 cm − 1 as a function of the absorbing analyte layer thickness.
Fig. 4. Linear fit of the effective refractive index of a 5 μm wide waveguide at a wavelength at 1700 cm − 1 as a function of the refractive index of the outer medium.
Fig. 5. (Top) Normalized electric field component along the center axis of a waveguide versus the waveguide width. Inset illustrates the waveguide section of the simulated electric field for a 5 μm wide waveguide at 1700 cm − 1 . (Bottom) Magnified view of the electric field above the waveguide surface (i.e., the evanescent field).
Markus Sieger, Boris Mizaikoff. Optimizing the design of GaAs/AlGaAs thin-film waveguides for integrated mid-infrared sensors[J]. Photonics Research, 2016, 4(3): 03000106.