Yb3+:GdGaGe2O7制备、结构及光谱性能

宁凯杰; 张庆礼; 孙敦陆; 殷绍唐

量子电子学报, 2011, 28 (2): 234, 网络出版: 2011-03-28

Yb³⁺:GdGaGe₂O₇制备、结构及光谱性能

Preparation, structure and spectral properties for Yb³⁺:GdGaGe₂O₇

论文大纲

宁凯杰 ^1,2,*张庆礼 ¹孙敦陆 ¹殷绍唐 ¹

作者单位

¹ 中国科学院安徽光学精密机械研究所安徽省光子器件与材料重点实验室,安徽合肥 230031

² 中国科学院研究生院,北京 100049

X射线衍射光致发光晶场能级 materials Yb3+:GdGaGe2 O7 Yb3+: GdGaGe2 O7 X-ray diffraction photoluminescence crystal field splitting

摘要

采用固相法制备了10 at% Yb3+:GdGaGe2 O7 多晶粉体, 通过X射线粉末衍射用Rietveld全谱拟合给出了其空间群为 P21/c, 晶格常数a、b、c和β, Gd/Yb和Ga的原子坐标,以及Ge1、Ge2、O1～O7的原子坐标。通过吸收谱、激发谱、光致发光谱和Raman光谱确定Yb3+的晶场能级分裂, 1003 nm发光在低温(8 K)和室温(300 K)时上能级荧光寿命为0.493 ms和0.774 ms。在室温下测量荧光寿命变长主要由再吸收引起。Yb3+:GdGaGe2 O7 的吸收和发射光谱均很宽,荧光寿命长,是潜在的全固态激光工作物质。

Abstract

10 at% Yb3+:GdGaGe2 O7 powders were prepared by solid state reaction method, and its structure was determined by the Rietveld refinement to the X-ray powder diffraction. Its space group is P21/c, lattice parameters of a, b, c, β and the atomic coordinates of Gd/Yb, Ga, Ge1, Ge2 and O1～O7 were obtained. The crystal field splitting of Yb3+in GdGaGe2 O7 was determined according to its absorption, excitation, emission and Raman spectra. The lifetime of 1003 nm emission is 0.493 ms at low temperature(8 K) and 0.774 ms at room temperature(300 K), and the obtained decay-time is longer at room temperature which is caused by its re-absorption. The emission and absorption spectra of Yb3+:GdGaGe2 O7 are relatively wide, the luminescence decay time is long, and it is a potential all-solid-state-laser medium.

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宁凯杰, 张庆礼, 孙敦陆, 殷绍唐. Yb³⁺:GdGaGe₂O₇制备、结构及光谱性能[J]. 量子电子学报, 2011, 28(2): 234. NING Kai-jie, ZHANG Qing-li, SUN Dun-lu, YIN Shao-tang. Preparation, structure and spectral properties for Yb³⁺:GdGaGe₂O₇[J]. Chinese Journal of Quantum Electronics, 2011, 28(2): 234.

Yb³⁺:GdGaGe₂O₇制备、结构及光谱性能

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