[1] Irmscher S, Lewen R, Eriksson U. InP-InGaAsP high-speed traveling-wave electroabsorption modulators with integrated termination resistors. IEEE Photonics Technology Letters, 2002, 14(7): 923-925

[2] Kim J, Kang Y S, Chung YD, Choi K S. Development and RF characteristics of analog 60-GHz electroabsorption modulator module for RF/optic conversion. IEEE Transactions on Microwave Theory and Techniques, 2006, 54(2): 780-787

[3] Kang Y S, Kim S B, Chung Y D, Kim J. Low insertion loss electroabsorption modulator based on dual waveguide sturcture with spot size converter. In: The 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, Sydney, NSW, 2005, 422-423

[4] Zhuang Y L, Chang W S C, Yu P K L. Peripheral-coupledwaveguide MQW electroabsorption modulator for near transparency and high spurious free dynamic range RF fiber-optic link. IEEE Photonics Technology Letters, 2004, 16(9): 2033-2035

[5] Chiu Y J, Wu T H, Cheng W C, Lin F J, Bowers J E. Enhanced performance in traveling-wave electroabsorption modulators based on undercut etching the active-region. IEEE Photonics Technology Letters, 2005, 17(10): 2065-2067

[6] Morrison G B, Raring J W, Wang C S, Skogen E J, Chang Y C, Sysak M, Coldren L A. Electroabsorption modulator performance predicted from band-edge absorption spectra of bulk, quantum-well, and quantum-well-intermixed InGaAsP structures. Solid-State Electronics, 2007, 51(1): 38-47

[7] Miyazaki Y, Tada H, Tokizaki S, Takagi K, Hanamaki Y, Aoyagi T, Mitsui Y. dBm average optical output power operation of smallchirp 40-gbps electroabsorption modulator with tensile-strained asymmetric quantum-well absorption layer. IEEE Journal of Quantum Electronics, 2003, 39(8): 1009-1017

[8] Shim J, Liu B, Bowers J E. Dependence of transmission curves on input optical power in an electroabsorption modulator. IEEE Journal of Quantum Electronics, 2004, 40(11): 1622-1628

[9] Abedi K, Ahmadi V, Darabi E, Moravvej-Farshi MK, SheikhiMH. Design of a novel periodic asymmetric intra-step-barrier coupled double strained quantum well electroabsorption modulator at 1.55 μm. Solid-State Electronics, 2008, 53(2): 312-322

[10] Abedi K, Ahmadi V, Moravvej-Farshi M K. Optical and microwave analysis of mushroom-type waveguides for traveling wave electroabsorption modulators based on asymmetric intra-step-barrier coupled double strained quantum wells by full-vectorial method. Optical and Quantum Electronics, 2009, 41(10): 719-733

[11] Abedi K. Improvement of saturation optical intensity in electroabsorption modulators with asymmetric intra-step-barrier coupled double strained quantum wells. The European Physical Journal Applied Physics, 2011, 56(1): 10403

[12] Abedi K. Improvement in performance of traveling wave electroabsorption modulator with asymmetric intra-step-barrier coupled double strained quantum wells the active region, segmented transmission-line and mushroom-type waveguide. Optical and Quantum Electronics, 2012, 44(1-2): 55-63

[13] Abedi K. The design of electroabsorption modulators with negative chirp and very low insertion loss. Journal of Semiconductors, 2012, 33(6): 064001

[14] Abedi K. High-performance traveling-wave electroabsorption modulators utilizing mushroom-type waveguide and periodic transmission line loading. Optoelectronics Letters, 2012, 8(3): 176-178

[15] Abedi K, Afrouz H. High performance hybrid silicon evanescent traveling wave electroabsorption modulators. Acta Physica Polonica A, 2013, 123(2): 415-417

[16] Abedi K. High-performance optical wavelength-selective switches based on double ring resonators. Optoelectronics Letters, 2013, 9(3): 185-188

[17] Abedi K. Design and modeling of traveling wave electrode on electroabsorption modulator based on asymmetric intra-step-barrier coupled double strained quantum wells active layer. International Journal of Advances in Engineering & Technology,, 2011, 1(4): 388-394

[18] Abedi K. Effects of geometrical structure on microwave and optical properties of traveling wave electroabsorption modulators based on asymmetric coupled strained quantum wells active layer. International Journal of Engineering Science and Technology, 2011, 3(8): 6684-6691

[19] Abedi K. An investigation of strain effect on saturation optical intensity in electroabsorption modulators based on asymmetric quantum wells. Canadian Journal on Electrical and Electronics Engineering, 2011, 2(6): 209-215

[20] Jirauschek C. Accuracy of transfer matrix approaches for solving the effective mass schrodinger equation. IEEE Journal of Quantum Electronics, 2009, 45(9): 1059 -1067

[21] Pires M P, Souza P L D, Yavich B, Pereira R G, Carvalho W. On the optimization of InGaAs-InAlAs quantum-well structures for electroabsorption modulators. Journal of Lightwave Technology, 2000, 18(4): 598-603

[22] Ohtoshi T. Numerical analysis of α parameters and extinction ratios in InGaAsP-InP pptical modulators. IEEE Journal of Selected Topics in Quantum Electronics, 2003, 9(3): 755-762

[23] Hou L P, Wang W, Zhu H L. Optimization design of an electroabsorption modulator integrated with spot-size converter. Optoelectronics Letters, 2005, 1(2): 83-87

[24] Shin D S. Waveguiding effect in electroabsorption modulators: passivation layers and their impact on extinction ratios. ETRI Journal, 2005, 27(1): 95-101