红外与毫米波学报, 2018, 37 (2): 168, 网络出版: 2018-05-29  

高功率单高阶模倒置表面浮雕结构垂直腔面发射激光器

High power single-higher-mode VCSEL with inverted surface relief
作者单位
1 长春理工大学 高功率半导体激光国家重点实验室,吉林 长春 130022
2 长春理工大学 科技部国家纳米操纵与制造国际联合研究中心,吉林 长春 130022
3 长春理工大学 空间光电技术研究所,吉林 长春 130022
引用该论文

王霞, 郝永芹, 晏长岭, 王作斌, 王志伟, 谢检来, 马晓辉, 姜会林. 高功率单高阶模倒置表面浮雕结构垂直腔面发射激光器[J]. 红外与毫米波学报, 2018, 37(2): 168.

WANG Xia, HAO Yong-Qin, YAN Chang-Ling, WANG Zuo-Bin, WANG Zhi-Wei, XIE Jian-Lai, MA Xiao-Hui, JIANG Hui-Lin. High power single-higher-mode VCSEL with inverted surface relief[J]. Journal of Infrared and Millimeter Waves, 2018, 37(2): 168.

参考文献

[1] Huang M C Y, Zhou Y, Changhasnain C J. A surface-emitting laser incorporating a high-index-contrast sub-wavelength grating[J].nature, 2007, 1(2):119-122.

[2] Haglund , Hashemi E, Bengtsson J, et al. Progress and challenges in electrically pumped GaN-based VCSELs[C]// SPIE Photonics Europe. 2016:98920Y.

[3] Haglund E, Westbergh P, Gustavsson, J S, et al. 30 GHz bandwidth 850 nm VCSEL with sub-100 fJ/bit energy dissipation at 25~50 Gbit/s[J]. Electronics Letters, 2015, 51(14):1096-1098.

[4] Iga K. Surface-emitting laser-its birth and generation of new optoelectronics field[J]. Selected Topics in Quantum Electronics IEEE Journal of, 2000, 6(6):1201-1215.

[5] Long C M, Mickovic Z, Dwir B, et al. Polarization mode control of long-wavelength VCSELs by intracavity patterning[J]. Optics Express, 2016, 24(9):9715.

[6] Zhou D, Mawst L J. High-power single-mode antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers[J]. IEEE Journal of Quantum Electronics, 2002, 38(12):1599-1606.

[7] Song D S, Kim S H, Park H G, et al. Single-fundamental-mode photonic-crystal vertical-cavity surface-emitting lasers[J]. Applied Physics Letters, 2002, 80(21):3901-3903.

[8] Unold H J, Mahmoud S W Z, Jager R, et al. Improving single-mode VCSEL performance by introducing a long monolithic cavity[J]. IEEE Photonics Technology Letters, 2000, 12(8):939-941.

[9] Haglund A, Gustavsson J S, Vukusic J, et al. Single fundamental-mode output power exceeding 6 mW from VCSELs with a shallow surface relief[J]. IEEE Photonics Technology Letters, 2006, 16(2):368-370.

[10] Jiao J, Wang W, Li L, et al. An improved magnetic field detection unit based on length-magnetized Terfenol-D and width-polarized ternary 0.35Pb(In1/2Nb1/2)O3-0.35Pb(Mg1/3Nb2/3)O3-0.30PbTiO3[J]. Applied Physics Letters, 2012, 101(23):391.

[11] Kroner A, Rinaldi F, Ostermann J M, et al. High-performance single fundamental mode AlGaAs VCSELs with mode-selective mirror reflectivities[J]. Optics Communications, 2007, 270(2):332-335.

[12] Furukawa A, Sasaki S, Hoshi M, et al. High-power single-mode vertical-cavity surface-emitting lasers with triangular holey structure[J]. Applied Physics Letters, 2004, 85(22): 5161-5163.

[13] Fischer A J, Choquette K D, Chow W W, et al. High single-mode power observed from acoupled-resonator vertical-cavity laser diode[J]. Appl. Phys. Lett. 2001, 79(25): 4079-4081.

[14] Shi J W, Chen C C, Wu Y S, et al. High-power and high-speed Zn-diffusion single fundamental-modevertical-cavity surface-emitting lasers at 850-nm wavelength[J]. IEEEPhoton. Technol. Lett. 2008, 20(13): 1121-1123.

[15] Kardosh I, Demaria F, Rinaldi F, et al. High-power single transverse mode vertical-cavity surface-emitting lasers with monolithically integrated curved dielectric mirrors[J]. IEEE Photonics Technology Letters, 2008, 20(24):2084-2086.

[16] Unold H J, Mahmoud S W Z, Jager R, et al. Large-area single-mode VCSELs and the self-aligned surface relief[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2001, 2(2):386-392.

[17] Haglund A, Gustavsson J S, Modh P, et al. Dynamic mode stability analysis of surface relief VCSELs under strong RF modulation[J]. IEEE Photonics Technology Letters, 2005, 17(8):1602-1604.

[18] Soderberg E, Gustavsson J S, Modh P, et al. Suppression of higher order transverse and oxide modes in 1.3-μm InGaAs VCSELs by an inverted surface relief[J]. IEEE Photonics Technology Letters, 2007, 19(5):327-329.

[19] Xu D W, Yoon S F, Ding Y, et al. 1.3-, m In(Ga)As quantum-dot VCSELs fabricated by dielectric-free approach with surface-relief process[J]. IEEE Photonics Technology Letters, 2011, 23(2):91-93.

[20] Jiang C H, Shi J W, Yen J L, et al. Single-mode vertical-cavity-surface-emitting[C]// Quantum Electronics and Laser Science Conference, 2005. QELS '05. IEEE, 2005, 2:1026-1028.

[21] Yen J L. Ring shaped vertical-cavity-surface-emitting-laser (VCSEL) with lower divergence angle performance[J].Lee-Ming Institute Technol Lett.2005, 18(1):61-66.

[22] Jung C, Jager R, Grabherr M, et al. 4.8 mW singlemode oxide confined top-surface emitting vertical-cavity laser diodes[J]. ELECTRONICS LETTERS-IEE. 1997, 33(21):1790-1791.

[23] Sale T E. Cavity and reflector design for vertical cavity surface emitting lasers[J]. IEE Proceedings-Optoelectronics. 1995, 142(1):37-43.

[24] Chang-Hasnain C J, Harbison J P, Hasnain G, et al. Dynamic, polarization, and transverse mode characteristics of vertical cavity surface emitting lasers[J]. IEEE Journal of Quantum Electronics, 1991, 27(6):1402-1409.

[25] Kroner A, Kardosh I, Rinaldi F, et al. Towards Vcsel-based integrated optical traps for biomedical applications[J]. Electronics Letters, 2006, 42(2):93-94.

[26] Chen C C, Liaw S J, Yang Y J. Stable single-mode operation of an 850-nm VCSEL with a higher order mode absorber formed by shallow Zn diffusion[J]. IEEE Photonics Technology Letters, 2001, 13(4):266-268.

[27] Bachmann A, Arafin S, Kashanishirazi K. Single-mode electrically pumped GaSb-based VCSELs emitting continuous-wave at 2.4 and 2.6 μm[J]. New Journal of Physics, 2009, 11(12):125014.

[28] Sanchez D, Cerutti L, Tournié E. Single-mode monolithic GaSb vertical-cavity surface-emitting laser.[J]. Optics Express, 2012, 20(14):15540-6.

[29] Bachmann A, Kashani-Shirazi K, Arafin S, et al. GaSb-Based VCSEL with buried tunnel junction for emission around 2.3μm[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2009, 15(3):933-940.

[30] Xiang L, Zhang X, Zhang J W, et al. Stable single-mode operation of 894.6 nm VCSEL at high temperatures for Cs atomic sensing[J]. Chinese Physics B, 2017, 26(7):130-133.

[31] Al-Samaneh A, Bou Sanayeh M, Miah M J, et al. Polarization-stable vertical-cavity surface-emitting lasers with inverted grating relief for use in microscale atomic clocks[J]. Applied Physics Letters, 2012, 101(17):640-649.

[32] Shi J W, Jiang C H, Chen K M, et al. Single-mode vertical-cavity surface-emitting laser with ring-shaped light-emitting aperture[J]. Applied Physics Letters, 2005, 87(3):221.

[33] QU Hong-Wei, GUO Xia, DONG Li-Min, et al. Study on the temperature characteristics of vertical cavity surface emitting laser[J]. Laser & Infrared(渠红伟, 郭霞, 董立闽,等.垂直腔面发射激光器温度特性的研究.激光与红外), 2005, 35(2):83-86.

[34] Ebeling K J. Integrated optoelectronics : waveguide optics, photonics, semiconductors[M]. Berlin ;New York :Springer-Verlag,c1993.

[35] Young E W, Choquette K D, Chuang S L, et al. Single-transverse-mode vertical-cavity lasers under continuous and pulsed operation[J]. Photonics Technology Letters IEEE, 2001, 13(9):927-929.

王霞, 郝永芹, 晏长岭, 王作斌, 王志伟, 谢检来, 马晓辉, 姜会林. 高功率单高阶模倒置表面浮雕结构垂直腔面发射激光器[J]. 红外与毫米波学报, 2018, 37(2): 168. WANG Xia, HAO Yong-Qin, YAN Chang-Ling, WANG Zuo-Bin, WANG Zhi-Wei, XIE Jian-Lai, MA Xiao-Hui, JIANG Hui-Lin. High power single-higher-mode VCSEL with inverted surface relief[J]. Journal of Infrared and Millimeter Waves, 2018, 37(2): 168.

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