[1] Holonyak J N, Bevacqua S F. Coherent (visible) light emission from Ga(As1-xPx) junctions. Applied Physics Letters, 1962, 1(4): 82-83

[2] Dupuis R D, Krames M R. History, development, and applications of high-brightness visible light-emitting diodes. Journal of Lightwave Technology, 2008, 26(9): 1154-1171

[3] Lee Y J, Lu T C, Kuo H C, Wang S C. High brightness GaN-based light-emitting diodes. Journal of Display Technology, 2007, 3(2): 118-125

[4] Nakamura S, Mukai T, Senoh M. High-power GaN P-N junction blue-light-emitting diodes. Japanese Journal of Applied Physics, 1991, 30(12A): L1998-L2001

[5] Nakamura S, Senoh M, Mukai T. High-power InGaN/GaN doubleheterostructure violet light emitting diodes. Applied Physics Letters, 1993, 62(19): 2390-2392

[6] Schlotter P, Schmidt R, Schneider J. Luminescence conversion of blue light emitting diodes. Applied Physics A: Materials Science & Processing, 1997, 64(4): 417-418

[7] Nakamura S, Pearton S, Fasol G. The Blue Laser Diode: GaN Based Light Emitters and Lasers. 2nd ed. Berlin: Springer, 1997, 215-230

[8] Evans D L. High-luminance LEDs replace incandescent lamps in new applications. In: Light-Emitting Diodes: Research, Manufacturing, and Applications. San Jose: SPIE, 1997, 3002: 142-153

[9] Steranka F M, Bhat J C, Collins D, Cook L, Craford M G, Fletcher R, Gardner N, Grillot P, Goetz W, Keuper M, Khare R, Kim A, Krames M, Harbers G, Ludowise M, Martin P S, Misra M, Mueller G, Mueller-Mach R, Rudaz S, Shen Y-C, Steigerwald D, Stockman S, Subramanya S, Trottier T, Wierer J J. High power LEDs: technology status and market applications. Physica Status Solidi A, 2002, 194(2): 380-388

[10] Craford M G. LEDs for solid state lighting and other emerging applications: status, trends, and challenges. In: Fifth International Conference on Solid State Lighting. San Diego: SPIE, 2005, 5941: 594101

[11] Wang K, Luo X, Liu Z, Zhou B, Gan Z, Liu S. Optical analysis of an 80-W light-emitting-diode street lamp. Optical Engineering, 2008, 47(1): 013002

[12] OIDA. Light emitting diodes (LEDs) for general illumination, an OIDA technology roadmap update 2002. 2002, http://lighting.sandia.gov/lightingdocs/OIDA_SSL_LED_Roadmap_Full.pdf

[13] LEDs Magazine. LED chips set new R&D records. 2008, http://www.ledsmagazine.com/features/5/10/5

[14] Haque S, Steigerwald D, Rudaz S, Steward B, Bhat J, Collins D, Wall F, Subramanya S, Elpedes C, Elizondo P, Martin P S. Packaging challenges of high-power LEDs for solid state lighting. 2000, http://www.lumileds.com/pdfs/techpaperspres/manuscript_IMAPS_2003.PDF

[15] Hahn B, Weimar A, Peter M, Baur J. High-power InGaN LEDs: present status and future prospects. In: Light-Emitting Diodes: Research, Manufacturing, and Applications XII. San Jose: SPIE, 2008, 6910: 691004

[16] Collins W D, Krames M R, Verhoeckx G J, Martin van Leth N J. US Patent, 6576488, 2001

[17] Yum J H, Seo S Y, Lee S, Sung Y E. Comparison of Y3Al5O12: Ce0.05 phosphor coating methods for white-light-emitting diode on gallium nitride. In: Solid State Lighting and Displays. San Diego: SPIE, 2001, 4445: 60-69

[18] Loh B P, Medendorp N W Jr, Andrews P, Fu Y, Laughner M, Letoquin R. US Patent, 20080079017 A1, 2008

[19] Braune B, Petersen K, Strauss J, Kromotis P, Kaempf M. A new wafer level coating technique to reduce the color distribution of LEDs. In: Light-Emitting Diodes: Research, Manufacturing, and Applications XI. San Jose: SPIE, 2007, 6486: 64860X

[20] Yamada K, Imai Y, Ishii K. Optical simulation of light source devices composed of blue LEDs and YAG phosphor. Journal of Light and Visual Environment, 2003, 27(2): 70-74

[21] Zhu Y, Narendran N, Gu Y. Investigation of the optical properties of YAG:Ce phosphor. In: Sixth International Conference on Solid State Lighting. San Diego: SPIE, 2006, 6337: 63370S

[22] Arik M, Setlur A, Weaver S, Haitko D, Petroski J. Chip to system levels thermal needs and alternative thermal technologies for high brightness LEDs. Journal of Electronic Packaging, 2007, 129(3): 328-338

[23] Luo H, Kim J K, Schubert E F, Cho J, Sone C, Park Y. Analysis of high-power packages for phosphor-based white-light-emitting diodes. Applied Physics Letters, 2005, 86(24): 243505

[24] Luo H, Kim J K, Xi Y, Schubert E F, Cho J, Sone C, Park Y. Analysis of high-power packages for white-light-emitting diode lamps with remote phosphor. Materials Research Society, 2006, 892: 187-194

[25] Kim J K, Luo H, Schubert E F, Cho J, Sone C, Park Y. Strongly enhanced phosphor efficiency in GaInN white light-emitting diodes using remote phosphor configuration and diffuse reflector cup. Japanese Journal of Applied Physics, 2005, 44(20-23): L649-L651

[26] Fan B F, Wu H, Zhao Y, Xian Y L, Wang G. Study of phosphor thermal-isolated packaging technologies for high-power white light-emitting diodes. IEEE Photonics Technology Letters, 2007, 19(15): 1121-1123

[27] Jordan R C, Bauer J, Oppermann H. Optimized heat transfer and homogeneous color converting for ultra high brightness LED package. In: Photonics in the Automobile II. Strasbourg: SPIE, 2006, 6198: 61980B

[28] Narendran N. Improved performance white LED. In: Fifth International Conference on Solid State Lighting. San Diego: SPIE, 2005, 5941: 594108

[29] Narendran N, Gu F, Freyssinier-Nova J P, Zhu Y. Extracting phosphor-scattered photons to improve white LED efficiency. Physica Status Solidi A, 2005, 202(6): R60-R62

[30] Liu Z Y, Liu S, Wang K, Luo X B. Analysis of factors affecting color distribution of white LEDs. In: Proceedings of 2008 International Conference on Electronic Packaging Technology and High Density Packaging. 2008, 4607013-1-4607013-8

[31] Allen S C, Steckl A J. ELiXIR-solid-state luminaire with enhanced light extraction by internal reflection. Journal of Display Technology, 2007, 3(2): 155-159

[32] Liu Z Y, Liu S, Wang K, Luo X B. Optical analysis of color distribution in white LEDs with various packaging methods. IEEE Photonics Technology Letters, 2008, 20(24): 2027-2029

[33] Fujii T, Gao Y, Sharma R, Hu E L, DenBaars S P, Nakamura S. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening. Applied Physics Letters, 2004, 84(6): 855-857

[34] Huang H W, Kao C C, Chu J T, Wang W C, Lu T C, Kuo H C, Wang S C, Yu C C, Kuo S Y. Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method. Materials Science and Engineering B, 2007, 136(2-3): 182-186

[35] Gao H Y, Yan F W, Fan Z C, Li J M, Zeng Y P, Wang G H. Improved light extraction of GaN-based LEDs with nanoroughened p-GaN surfaces. Chinese Physics Letters, 2008, 25(9): 3448-3451

[36] Mont F W, Kim J K, Schubert M F, Luo H, Schubert E F, Siegel R W. High refractive index nanoparticle-loaded encapsulants for light-emitting diodes. In: Light-Emitting Diodes: Research, Manufacturing, and Applications XI. San Jose: SPIE, 2007, 6486: 64861C

[37] Narendran N, Gu Y, Freyssinier J P, Yu H, Deng L. Solid-state lighting: failure analysis of white LEDs. Journal of Crystal Growth, 2004, 268(3-4): 449-456

[38] Norris AW, Bahadur M, Yoshitake M. Novel silicone materials for LED packaging. In: Fifth International Conference on Solid State Lighting. San Diego: SPIE, 2005, 5941: 594115

[39] Bahadur M, Norris A W, Zarisfi A, Alger J S, Windiate C C. Silicone materials for LED packaging. In: Sixth International Conference on Solid State Lighting. San Diego: SPIE, 2006, 6337: 63370F

[40] Lee S J. Light-emitting diode lamp design by Monte Carlo photon simulation. In: Light-Emitting Diodes: Research, Manufacturing, and Applications V. San Jose: SPIE, 2001, 4278: 99-108

[41] West R S. Side-emitting high-power LEDs and their application in illumination. In: Solid State Lighting II. Seattle: SPIE, 2002, 4776: 171-175

[42] Chang J G, Liao C L D, Hwang C C. Enhancement of the optical performances for the LED backlight systems with a novel lens cap. In: Novel Optical Systems Design and Optimization IX. San Diego: SPIE, 2006, 6289: 62890X

[43] Chao P C P, Liao L D, Chiu C W. Design of a novel LED lens cap and optimization of LED placement in a large area direct backlight for LCD-TVs. In: Photonics in Multimedia. Strasbourg: SPIE, 2006, 6196: 61960N

[44] Chi W, George N. Light-emitting diode illumination design with a condensing sphere. Journal of the Optical Society of America A, 2006, 23(9): 2295-2298

[45] Liu Z Y, Liu S, Wang K, Luo X B. Effects of phosphor’s location on LED packaging performance. In: Proceedings of 2008 International Conference on Electronic Packaging Technology and High Density Packaging. 2008, 4606982-1-4606982-7

[46] Wang D M, Chen S H, Wang M, Xiang S H. The design and fabrication of microlens and LED integrated packaging. In: Proceedings of the 7th International Conference on Electronic Packaging Technology, Shanghai. 2006, 359803-1-359803-3

[47] Zachau M, Becker D, Berben D, Fiedler T, Jermann F, Zwaschka F. Phosphors for solid state lighting. In: Light-Emitting Diodes: Research, Manufacturing, and Applications XII. San Jose: SPIE, 2008, 6910: 691010

[48] Mesli T. Improvement of ultra-high-brightness white LEDs. In: Manufacturing LEDs for Lighting and Displays. Berlin: SPIE, 2007, 6797: 67970N

[49] Braune B, Bogner G, Brunner H, Kraeuter G, Hoehn K. New developments in LED lighting by novel phosphors. In: Light-Emitting Diodes: Research, Manufacturing, and Applications VII. San Jose: SPIE, 2003, 4996: 87-94

[50] Mueller-Mach R, Mueller G O, Krames M R. Phosphor materials and combinations for illumination-grade white PCLEDs. In: Third International Conference on Solid State Lighting. San Diego: SPIE, 2004, 5187: 115-122

[51] Mueller-Mach R, Mueller G O, Krames M R, Trottier T. Highpower phosphor-converted light-emitting diodes based on IIINitrides. IEEE Journal of Selected Topics in Quantum Electronics, 2002, 8(2): 339-345

[52] Ohno Y. Color rendering and luminous efficacy of white LED spectra. In: Fourth International Conference on Solid State Lighting. Denver: SPIE, 2004, 5530: 88-98

[53] Braune B, Brunner H, Strauss J, Petersen K. Light conversion in opto semiconductor devices: from the development of luminous materials to products with customized colors. In: Optoelectronic Devices: Physics, Fabrication, and Application II. Boston: SPIE, 2005, 6013: 60130D

[54] Chou H Y, Hsu T H, Yang T H. Effective method for improving illuminating properties of white-light LEDs. In: Light-Emitting Diodes: Research, Manufacturing, and Applications IX. San Jose: SPIE, 2005, 5739: 33-41

[55] Krames M R, Shchekin O B, Mueller-Mach R, Mueller G O, Zhou L, Harbers G, Craford M G. Status and future of high-power lightemitting diodes for solid-state lighting. Journal of Display Technology, 2007, 3(2): 160-175

[56] Summers C J, Wagner B K, Menkara H. Solid state lighting: diode phosphors. In: Third International Conference on Solid State Lighting. San Diego: SPIE, 2004, 5187: 123-132

[57] Wu H, Zhang X, Guo C, Xu J,Wu M, Su Q. Three-band white light from InGaN-based blue LED chip precoated with green/red phosphors. IEEE Photonics Technology Letters, 2005, 17(6): 1160-1162

[58] Mueller-Mach R, Mueller G, Krames M R, H ppe H A, Stadler F, Schnick W, Juestel T, Schmidt P. Highly efficient all-nitride phosphor-converted white light emitting diode. Physica Status Solidi A, 2005, 202(9): 1727-1732

[59] Taguchi T. Overview: present status and future prospect of system and design in white LED lighting technologies. In: Fourth International Conference on Solid State Lighting. Denver: SPIE, 2004, 5530: 7-16

[60] Nayama S, Itoh K. Case Study on combination of fluorescent materials for white LED to obtain high color rendering indexes. Journal of Light and Visual Environment, 2006, 30(1): 39-42

[61] Kobashi K, Taguchi T. Warm white LEDs lighting over Ra = 95 and its applications. In: Light-Emitting Diodes: Research, Manufacturing, and Applications XI. San Jose, CA, USA: SPIE, 2007, 6486: 648610

[62] Uchida Y, Taguchi T. Theoretical and experimental luminous characteristics of white LEDs composed of multiphosphors and near-UV LED for lighting. In: Light-Emitting Diodes: Research, Manufacturing, and Applications VII. San Jose: SPIE, 2003, 4996: 166-173

[63] Hui K N, Lai P T, Choi H W. Spectral conversion with fluorescent microspheres for light emitting diodes. Optics Express, 2008, 16(1): 13-18

[64] Lee H, Park Y, Chang M, Kim G, Hong S, Won H, Lee J, Oh Y. The enhancement of light efficiency using modified phosphor which is coated sub-micro size sulfonated polystyrene beads. In: Nanophotonic Materials III. San Diego: SPIE, 2006, 6321: 63210B

[65] Arik M, Becker C A,Weaver S E, Petroski J. Thermal management of LEDs: package to system. In: Third International Conference on Solid State Lighting. San Diego: SPIE, 2004, 5187: 64-75

[66] Kuckmann O. High-power LED arrays: special requirements on packaging technology. In: Light-Emitting Diodes: Research, Manufacturing, and Applications X. San Jose: SPIE, 2006, 6134: 613404

[67] Hu J, Yang L, Shin M W. Thermal effects of moisture inducing delamination in light-emitting diode packages. In: Advanced LEDs for Solid State Lighting. Gwangju: SPIE, 2006, 6355: 635516

[68] You J P, He Y, Shi F G. Thermal management of high power LEDs: Impact of die attach materials. In: Proceedings of 2007 International Microsystems, Packaging, Assembly and Circuits Technology. 2007, 239-242

[69] Tu K N, Gusak A M, Li M. Physics and materials challenges for lead-free solders. Journal of Applied Physics, 2003, 93(3): 1335-1353

[70] Park J W, Yoon Y B, Shin S H, Choi S H. Joint structure in high brightness light emitting diode (HB LED) packages. Materials Science and Engineering: A, 2006, 441(1-2): 357-361

[71] Fan B F, Zhao Y, Xian Y L, Wang G. Thermal simulation studies of high-power light-emitting diodes. In: Advanced LEDs for Solid State Lighting. Gwangju: SPIE, 2006, 6355: 63550D

[72] Arik M, Weaver S. Effect of chip and bonding defects on the junction temperatures of high-brightness light-emitting diodes. Optical Engineering, 2005, 44(11): 111305

[73] Hartmann P, Wenzl F P, Sommer C, Pachler P, Hoschopf H, Schweighart M, Hartmann M, Kuna L, Jakopic G, Leising G, Tasch S. White LEDs and modules in chip-on-board technology for general lighting. In: Sixth International Conference on Solid State Lighting. San Diego: SPIE, 2006, 6337: 63370I

[74] Petroski J. Spacing of high-brightness LEDs on metal substrate PCB’s for proper thermal performance. In: Proceedings of the Ninth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, 2004, 2: 507-514

[75] DeMilo C, Bergad C, Forni R, Brukilacchio T. Thermally induced stresses resulting from coefficient of thermal expansion differentials between an LED sub-mount material and various mounting substrates. In: Light-Emitting Diode: Research, Manufacturing, and Applications XI. San Jose: SPIE, 2007, 6486: 64860N

[76] Cho H M, Kim H J. Metal-core printed circuit board with alumina layer by aerosol deposition process. IEEE Electron Device Letters, 2008, 29(9): 991-993

[77] Kurokawa Y, Utsumi K, Takamizawa H, Kamata T, Noguchi S. AlN substrates with high thermal conductivity. IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1985, 8(2): 247-252

[78] Occhionero M A, Adams R W. AlSiC, and AlSiC hybrid composites for flip chips, optoelectronics, power, and high brightness LED thermal management solutions. In: Proceedings of the 6th International Conference on Electronic Packaging Technology. 2005, 576-580

[79] Hu J, Yang L, Shin M W. Thermal and mechanical analysis of high-power LEDs with ceramic packages. IEEE Transactions on Device and Materials Reliability, 2008, 8(2): 297-303

[80] Park J K, Shin H D, Park Y S, Park S Y, Hong K P, Kim B M. A suggestion for high power LED package based on LTCC. In: Proceedings of the 56th Electronic Components and Technology Conference. 2006, 1070-1075

[81] Shin M W. Thermal design of high-power LED package and system. In: Advanced LEDs for Solid State Lighting. Gwangju: SPIE, 2006, 6355: 635509

[82] Yang L, Jang S, Hwang W, Shin M. Thermal analysis of high power GaN-based LEDs with ceramic package. Thermochimica Acta, 2007, 455(1-2): 95-99

[83] Carl H Z. New material options for light-emitting diode packaging. In: Light-Emitting Diodes: Research, Manufacture, and Applications VIII. Bellingham: SPIE, 2004, 5366: 173-182

[84] Zweben C. Advances in LED packaging and thermal management materials. In: Light-Emitting Diodes: Research, Manufacturing, and Applications XII. San Jose: SPIE, 2008, 6910: 691018

[85] Kim K M, Shin S H, Lee Y K, Choi S M, Kwon Y S. Aluminiumbased packaging platform for LED using selectively anodising method. Electronics Letters, 2008, 44(1): 24-25

[86] Gao S, Hong J, Shin S, Lee Y, Choi S, Yi S. Design optimization on the heat transfer and mechanical reliability of high brightness light emitting diodes (HBLED) package. In: Proceedings of the 58th Electronic Components and Technology Conference. Orlando: IEEE, 2008, 798-803

[87] Kai Z, YuenMMF. Heat spreader with aligned CNTs designed for thermal management of HB-LED packaging and microelectronic packaging. In: Proceedings of the 7th International Conference on Electronic Packaging Technology. 2006, 1-4

[88] Zhang K, Yuen M M F, Wang N, Miao J Y, Xiao D G W, fan H B. Thermal interface material with aligned CNT and its application in HB-LED packaging. In: Proceedings of the 56th Electronic Components and Technology Conference. 2006, 177-182

[89] Christensen A, Graham S. Thermal effects in packaging high power light emitting diode arrays. Applied Thermal Engineering, 2009, 29(2-3): 364-371

[90] Liu S, Lin T, Luo X B, Chen M X, Jiang X P. A microjet array cooling system for thermal management of active radars and highbrightness LEDs. In: Proceedings of the 56th Electronic Components and Technology Conference. 2006, 1634-1638

[91] Luo X B, Liu S. A microjet array cooling system for thermal management of high-brightness LEDs. IEEE Transactions on Advanced Packaging, 2007, 30(3): 475-484

[92] Luo X B, Chen W, Sun R X, Liu S. Experimental and numerical investigation of a microjet-based cooling system for high power LEDs. Heat Transfer Engineering, 2008, 29(9): 774-781

[93] Liu S, Yang J H, Gan Z Y, Luo X B. Structural optimization of a microjet based cooling system for high power LEDs. International Journal of Thermal Sciences, 2008, 47(8): 1086-1095

[94] LEDs Magazine. Lumileds recalls some Luxeons, halts production line. 2008, http://ledsmagazine.com/news/5/1/19

[95] Hsu Y C, Lin Y K, Chen M H, Tsai C C, Kuang J H, Huang S B, Hu H L, Su Y I, Cheng W H. Failure mechanisms associated with lens shape of high-power LED modules in aging test. IEEE Transactions on Electron Devices, 2008, 55(2): 689-694

[96] Hu J Z, Yang L Q, Shin M W. Mechanism and thermal effect of delamination in light-emitting diode packages. Microelectronics Journal, 2007, 38(2): 157-163

[97] Jayasinghe L, Dong T M, Narendran N. Is the thermal resistance coefficient of high-power LEDs constant In: Seventh International Conference on Solid State Lighting. San Diego: SPIE, 2007, 6669: 666911

[98] Meneghini M, Trevisanello L, Sanna C, Mura G, Vanzi M, Meneghesso G, Zanoni E. High temperature electro-optical degradation of InGaN/GaN HBLEDs. Microelectronics Reliability, 2007, 47(9-11): 1625-1629

[99] Su Y K, Chen K C, Lin C L. Ultra high power light-emitting diodes with electroplating technology. In: Proceedings of IEEE Conference on Electron Devices and Solid-State Circuits. 2007, 19-22

[100] Trevisanello L R, Meneghini M, Mura G, Sanna C, Buso S, Spiazzi G, Vanzi M, Meneghesso G, Zanoni E. Thermal stability analysis of high brightness LED during high temperature and electrical aging. In: Seventh International Conference on Solid State Lighting. San Diego: SPIE, 2007, 6669: 666913

[101] Biber C. LED light emission as a function of thermal conditions. In: Proceedings of the 24th Annual IEEE Semiconductor Thermal Measurement and Management Symposium. 2008, 180-184

[102] Buso S, Spiazzi G, Meneghini M, Meneghesso G. Performance degradation of high-brightness light emitting diodes under DC and pulsed bias. IEEE Transactions on Device and Materials Reliability, 2008, 8(2): 312-322

[103] Hwang N. Failure analysis matrix of light emitting diodes for general lighting applications. In: Proceedings of the 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits. 2008, 1-4

[104] Trevisanello L, Meneghini M, Mura G, Vanzi M, Pavesi M, Meneghesso G, Zanoni E. Accelerated life test of high brightness light emitting diodes. IEEE Transactions on Device and Materials Reliability, 2008, 8(2): 304-311

[105] Lim C H, Jeung W K, Choi S M. LED packaging using high sag rectangular microlens array. In: Micro-Optics, VCSELs, and Photonic Interconnects II: Fabrication, Packaging, and Integration. Strasbourg: SPIE, 2006, 6185: 618516

[106] Tsou C F, Huang Y S. Silicon-based packaging platform for lightemitting diode. IEEE Transactions on Advanced Packaging, 2006, 29(3): 607-614

[107] Wall F, Martin P S, Harbers G. High-power LED package requirements. In: Third International Conference on Solid State Lighting. San Diego: SPIE, 2004, 5187: 85-92

[108] Muller G O, Muller-Mach R B, Krames M R, Schmidt P J, Bechtel H H, Meyer J, de Graaf J, Kop TA. US Patent, 20080138919, 2008

[109] Fujita S, Yoshihara S, Sakamoto A, Yamamoto S, Tanabe S. YAG glass-ceramic phosphor for white LED (I): background and development. In: Fifth International Conference on Solid State Lighting. San Diego: SPIE, 2005, 5941: 594111

[110] Tanabe S, Fujita S, Yoshihara S, Sakamoto A, Yamamoto S. YAG glass-ceramic phosphor for white LED (II): luminescence characteristics. In: Fifth International Conference on Solid State Lighting. San Diego: SPIE, 2005, 5941: 594112

[111] Wang H, Lee K S, Ryu J H, Hong C H, Cho Y H. Active packaging method for light-emitting diode lamps with photosensitive epoxy resins. IEEE Photonics Technology Letters, 2008, 20(2): 87-89

[112] Wang H, Ryu J H, Lee K S, Tan C H, Jin L, Li S, Hong C H, Cho Y H, Liu S. Active packing method for blue light-emitting diodes with photosensitive polymerization: formation of self-focusing encapsulates. Optics Express, 2008, 16(6): 3680-3685

[113] Bortz J C, Shatz N E, Pitou D. Optimal design of a nonimaging projection lens for use with an LED source and a rectangular target. In: Novel Optical Systems Design and Optimization III. San Diego: SPIE, 2000, 4092: 130-138

[114] Cvetkovic A, Dross O, Chaves J, Benítez P, Mi ano J C, Mohedano R. Etendue preserving mixing and projection optics for high brightness LEDs applied to automotive headlamps. In: International Optical Design Conference 2006. Vancouver: SPIE, 2006, 6342: 63420R

[115] Wang L, Qian K Y, Luo Y. Discontinuous free-form lens design for prescribed irradiance. Applied Optics, 2007, 46(18): 3716-3723

[116] Ding Y, Liu X, Zheng Z R, Gu P F. Freeform LED lens for uniform illumination. Optics Express, 2008, 16(17): 12958-12966

[117] Wang K, Liu S, Luo X B, Liu Z Y, Chen F. Optical analysis of a 3W light-emitting diode (LED) MR16 lamp. In: Proceedings of International Conference on Electronic Packaging Technology and High Density Packaging. 2008, 4607028-1-4607028-5