垂直腔面发射激光器中顶层相位对模式特性的影响
[1] Giboney K S, Aronson L B, Lemoff B E. The ideal light source for datanets. IEEE Spectrum, 1998, 35(2):43~53
[2] Koyama F, Kinoshita S, Iga K. Room-temperature continuous wave lasing characteristics of a GaAs vertical cavity surface-emitting laser. Appl. Phys. Lett., 1989, 55(3):221~222
[3] Qian Y, Zhu Z H, Lo Y H et al.. Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement. Appl. Phys. Lett., 1997, 71(1):25~27
[4] 林世鸣, 吴荣汉, 黄永箴等. 低阈值电流的GaAs/GaAlAs垂直腔面发射激光器. 高技术通讯, 1994, 4(10):11~13
[5] 吴荣汉, 周增圻, 林耀望等. 亚毫安室温连续工作InGaAs垂直腔面发射激光器. 高技术通讯, 1995, 5(9):24~26
[6] 郭长志, 陈水莲. 分布反射面发射垂直微腔半导体激光器的微腔效应. 物理学报, 1997, 46(9):1731~1743
[7] Huang Y Z, Pan Z, Wu R H. Analysis of the optical confinement factor in semiconductor lasers. J. Appl. Phys., 1996, 79(8):3827~3830
[8] Huang Y Z, Wang C M. Resonant tunneling, eigenvalue and energy band calculation for potential and periodical potential structures. Appl. Phys. (A), 1992, 54(2):191~195
[9] Huang Y Z. Effect of reflectivity at the interface of oxide layer on transverse mode control in oxide confined vertical-cavity surface-emitting lasers. J. Appl. Phys., 1998, 83(7):3769~3772
[10] 刘德贵, 费景高, 于泳江等编. FORTRAN算法汇编, 第二分册, 北京: 国防工业出版社, 1983. 334~341
[11] Yang G M, MacDougal M H, Pudikov V et al.. Influence of mirror reflectivity on laser performance of very-low-threshold vertical-cavity surface-emitting lasers. IEEE Photon. Technol. Lett., 1995, 7(11):1228~1230
黄永箴. 垂直腔面发射激光器中顶层相位对模式特性的影响[J]. 光学学报, 2000, 20(2): 181. 黄永箴. Influence of Reflection Phase of Air Interface on Mode Characteristics of Vertical-Cavity Surface-Emitting Lasers[J]. Acta Optica Sinica, 2000, 20(2): 181.