Influence of growth temperature on crystalline quality and Raman property of InAs0.6P0.4/InP
[1] C. A. Tran, R. A. Masut, J. L. Brenbner, R. Leonelli, J. T. Graham and P. Cova, Journal of Crystal Growth, 124, 596 (1992).
[2] M. D. Birowosuto, A. Yokoo, G. Q. Zhang, K. Tateno, E. Kuramochi, H. Taniyama, M. Takiguchi and M. Notomi, Nature Materials 13, 279 (2014).
[3] T. J. Lu, S. H. Kim, P. A. Postigo, P. Regreny, C. Seassal and A. Scherer, Electronics Letters 49, 1633 (2013).
[4] M. A. Meeker, B. A. Magill, T. R. Merritt, M. Bhowmick, K. McCutcheon, G. A. Khodaparast, J. G. Tischler, S. McGill, S. G. Choi and C. J. Palmstr m, Applied Physics Letters 102, 222102 (2013).
[5] J. S. Byun, T. J. Kim, S.Y. Hwang. Y. R. Kang, J. C. Park and Y. D. Kim, Thin Solid Films 558, 438 (2014).
[6] L. Ji, S. L. Lu, Y. M. Zhao, M. Tan, J. R. Dong and H. Yang, Journal of Crystal Growth 363, 44 (2013).
[7] S. H. Kim, J. K Lee, H. S. Jeon, S. Callard, C. Seassal, K. D. Song and H. G. Park, Physical Review A 88, 023804 (2013).
[8] M. K. Hudait, Y. Lin, C. L. Andre, P. M. Sinha, C. A. Tivarus, J. P. Pelz, D. M. Wilt and S. A. Ringel, Applied Physics Letters 82, 3212 (2003).
[9] R. People and J. C. Bean, Applied Physics Letters 47, 322 (1985).
[10] M. K. Hudait, Y. Lin and S. A. Ringel, Journal of Applied Physics 105, 061643 (2009).
[11] Y. Tatsuoka, M. Uemura, T. Kitada, S. Shimomura and S. Hiyamizu, Journal of Crystal Growth 227-228, 266 (2001).
[12] Z. X. Ma, Q. S. Li, L.C. Zhang, F. Z. Zhao and Y. Ren, Journal of Optoelectronics·Laser 23, 819 (2012). (in Chinese)
[13] B. J. Zheng and W. Hu, Journal of Optoelectronics·Laser 24, 1942 (2013). (in Chinese)
[14] M. Wada, S. Araki, T. Kudou, T. Umezawa, S. Nakajima and T. Ueda, Applied Physics Letters 76, 2722 (2000).
[15] W. Gao, P. R. Berger, M. H. Ervin, J. Pamulapati, R. T. Lareau and S. Schauer, Journal of Applied Physics 80, 7094 (1996).
[16] R. Carles, N. Saint-Cricq, J. B. Renucci and R. J. Nicholas, J. Phys. C: Solid State Phys. 13, 899 (1980).
[17] K. P. Jain, R. K. Soni, S. C. Abbi and M. Balkanski, Physical Review B 32, 100 (1985).
[18] A. Sayari, N. Yahyaoui, A. Meftah, A. Sfaxi and M. Oueslati, Journal of Luminescence 129, 105 (2009).
[19] S. D. Wu, L.W. Guo, Z. H. Li, X. Z. Shang, W. X. Wang, Q. Huang and J. M. Zhou, Journal of Crystal Growth 277, 21 (2005).
LIU Xia, CAO Lian-zhen, SONG Hang, JIANG Hong. Influence of growth temperature on crystalline quality and Raman property of InAs0.6P0.4/InP[J]. 光电子快报（英文版）, 2014, 10(4): 269.
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