[1] 安宁, 刘国军, 李占国, 等. 2 μm半导体激光器有源区量子阱数的优化设计［J］. 红外与激光工程, 2015, 44(7): 1969-1974.

    AN Ning, LIU Guo-jun, LI Zhan-guo, et al. Optimization of the number of quantum wells in the active region for 2 μm laser diode［J］. Infrared and Laser Engineering, 2015, 44(7): 1969-1974.

[2] 田超群, 魏冬寒, 刘磊, 等. 中红外半导体激光器GaSb基材料的刻蚀研究［J］. 红外与激光工程, 2013, 42(12): 3363-3366.

    TIAN Chao-qun, WEI Dong-han, LIU Lei, et al. Etching of GaSb-based materials of mid-infrared semiconductor laser［J］. Infrared and Laser Engineering, 2013, 42(12): 3363-3366.

[3] SONG Yu-zhi, SONG Jia-kun, ZHANG Yu, et al. High power and low loss room-temperature operation of 2.4 μm GaInAsSb/ AlGaAsSb type-I strained quantum-well laser diodes［C］. SPIE, 2015: 9671： 96710P.

[4] NEWELL T, WU X, GRAY A L, et al. The effect of increased valence band offset on the operation of 2 μm GaInAsSb-AlGaAsSb lasers［J］. IEEE Photon Technolnogy Letter, 1999, 11(1): 30-32

[5] MERMELSTEIN C, SIMANOWSKI S, MAYER M, et al. Room-temperature cw operation of GaInAsSb/AIGaAsSb quantum well diode lasers emitting beyond 2 um［J］.IEEE Lasers and Electro-Optics, 2000, 6784136: 65.

[6] RATTUNDE M, SCHMITZ J, KAUFEL G, et al. GaSb-based 2.X mum quantum-well diode lasers with low beam divergence and high output power［J］. Applied Physics Letters, 2006, 88(8): 081115.

[7] ZIEGLER M, HEMPEL M, LARSEN H E, et al. Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage［J］. Applied Physics Letters, 2010, 97(2): 021110.

[8] ALMUHANNA A, ALHARBI A, SALHI A. Waveguide design optimization for long wavelength semiconductor lasers with low threshold current and small beam divergence［J］. Journal of Modern Physics, 2011, 2(04): 225-230.

[9] 曹长庆, 曾晓东, 冯喆珺, 等. 大功率半导体激光器远场光分布特性［J］. 光子学报, 2011, 40(sup1): 68-72.

    CAO Chang-qing, ZENG Xiao-dong, FENG Zhe-jun, et al. Far-field intensity distributions of high power semiconductor lasers ［J］. Acta Photonica Sinica, 2011, 40(sup1): 68-72.

[10] 陈少娟, 李毅, 袁文瑞, 等. 980nm 半导体激光器输出光谱特性的改善［J］. 光子学报, 2014, 44(1): 0114003.

    CHEN Shao-juan, LI Yi, YUAN Wen-rui, et al. Improvement of the spectral characteristics of 980 nm semiconductor laser［J］. Acta Photonica Sinica, 2014, 44(1): 0114003.

[11] 何国荣, 沈文娟, 王青, 等. 高功率980 nm垂直腔面发射激光器的温度特性［J］. 红外与激光工程, 2010, 39(1): 57-60.

    HE Guo-rong, SHEN Wen-juan, WANG Qing, et al. Temperature characteristics of 980 nm high power vertical cavity surface emitting lasers［J］. Infrared and Laser Engineering, 2010, 39(1): 57-60.

[12] 王鑫, 王翠鸾, 吴霞, 等.GaAs基高功率半导体激光3器单管耦合研究［J］.发光学报, 2015, 36(9)：1018-1021.

    WANG Xin, WANG Cui-luan, WU Xia, et al. Coupling research of high power single GaAs based semiconductor laser［J］. Chinese Journal of Luminescence, 2015, 36(9): 1018-1021.