高速高效光电探测器的制备、测试及特性分析

刘少卿; 韩勤; 杨晓红; 刘宇; 王杰; 王秀平

doi:doi:10.3788/lop49.022301

激光与光电子学进展, 2012, 49 (2): 022301, 网络出版: 2011-11-28

高速高效光电探测器的制备、测试及特性分析

Fabrication and Characterization of High-Speed and High-Efficiency Photodetector

论文大纲

刘少卿 ^*韩勤杨晓红刘宇王杰王秀平

作者单位

中国科学院半导体研究所集成光电子学国家重点实验室，北京 100083

光学器件 pin探测器高速高效 optical devices pin photodetector InGaAs InGaAs high speed high-efficiency

摘要

报道了一种垂直入射的InP基InGaAs pin光电探测器，介绍了它的制备和测试方法并对器件所展示出的高效，高速，高线性度特性进行了分析。器件的暗电流密度在0和-5 V偏压时分别为1.37×10-5A/cm2和93×10-5 A/cm2；在1.55 μm波长，-3 V偏压下，器件的线性光响应高达28 mW，相应的最大线性电流为17 mA，响应度达到0.61 A/W(无减反射膜)；在-5 V偏压下，器件获得高达17.5 GHz的3 dB带宽。

Abstract

In this paper, we demonstrate a top-illuminated InGaAs pin photodetector grown on InP substrate. The fabrication, measurement and characterization of this photodetector are discussed in this paper. Low dark current densities of 1.37×10-5 A/cm2 at 0 and 93×10-5 A/cm2 at a reverse bias of 5 V are achieved. At a wavelength of 1.55 μm, the photodetectors have a responsivity of 0.61 A/W without antireflection coating, a linear photoresponse up to 28 mW optical power and a maximum linear photocurrent of 17 mA at -3 V. The measured 3 dB bandwidth of a 22 μm-diameter photodetector is 17.5 GHz.

参考文献

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刘少卿, 韩勤, 杨晓红, 刘宇, 王杰, 王秀平. 高速高效光电探测器的制备、测试及特性分析[J]. 激光与光电子学进展, 2012, 49(2): 022301. Liu Shaoqing, Han Qin, Yang Xiaohong, Liu Yu, Wang Jie, Wang Xiuping. Fabrication and Characterization of High-Speed and High-Efficiency Photodetector[J]. Laser & Optoelectronics Progress, 2012, 49(2): 022301.

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