62%电光转换效率的高功率808 nm半导体激光器
李沛旭, 蒋锴, 张新, 汤庆敏, 夏伟, 李树强, 任忠祥, 徐现刚. 62%电光转换效率的高功率808 nm半导体激光器[J]. 光学学报, 2011, 31(s1): s100308.
李沛旭, 蒋锴, 张新, 汤庆敏, 夏伟, 李树强, 任忠祥, 徐现刚. High Power 808 nm Laser Diode with 62% Wall-Plug Efficiency[J]. Acta Optica Sinica, 2011, 31(s1): s100308.
[1] Yi Qu, Shu Yuan, Chongyang Liu et al.. High-power InAlGaAs/GaAs and AlGaAs/GaAs semiconductor laser arrays emitting at 808 nm[J]. Photon. Technol. Lett., 2004, 16(2): 389~391
[2] Robin K. Huang, Bien Chann, Leo J. Missaggia et al.. High-brightness wavelength beam combined semiconductor laser diode arrays[J]. Photon. Technol. Lett., 2007, 19(4): 209~211
[3] 杨红伟, 黄科, 陈宏泰 等. 高效率连续1000 W半导体激光器叠层阵列[J]. 半导体技术, 2010, 35(4): 340~343
Yang Hongwei, Huang Ke, Chen Hongtai et al.. High efficiency CW 1000 W semiconductor laser stack array[J]. Semiconductor Technology, 2010, 35(4): 340~343
[4] 李晨, 刘英斌, 宋雪云 等. 高效率高亮度半导体激光器技术进展[J]. 半导体技术, 2008, 33(9): 748~751
Li Chen, Liu Yingbin, Song Xueyun et al.. Recent development of high-efficiency high-brightness semiconductor lasers[J]. Semiconductor Technology, 2008, 33(9): 748~751
[5] 辛国锋, 翟荣辉, 方祖捷 等. 大功率半导体激光器的最新进展[J]. 激光与光电子学进展, 2006, 43(2): 3~8
[6] Peixu Li, Ling Wang, Shuqiang Li et al.. MOCVD growth of AlGaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power[J]. Chin. Opt. Lett., 2009, 7(6): 489~491
[7] Peixu Li, Kai Jiang, Shuqiang Li et al.. Influence of the upper waveguide layer thickness on optical field in asymmetric heterostructure quantum well laser diode[J]. Chin. Opt. Lett., 2010, 8(5): 493~495
李沛旭, 蒋锴, 张新, 汤庆敏, 夏伟, 李树强, 任忠祥, 徐现刚. 62%电光转换效率的高功率808 nm半导体激光器[J]. 光学学报, 2011, 31(s1): s100308. 李沛旭, 蒋锴, 张新, 汤庆敏, 夏伟, 李树强, 任忠祥, 徐现刚. High Power 808 nm Laser Diode with 62% Wall-Plug Efficiency[J]. Acta Optica Sinica, 2011, 31(s1): s100308.