[1] . Polymorphism of LiMO2 compounds and high-pressure single-crystal synthesis of LiBO2[J]. J.Chem. Phys., 1966, 44(9): 3348-3353.

[2] . Synthesis of LiAlO2 powder by hydrolysis of metal alkoxides[J]. J. Am. Ceram. Soc., 1987, 70(3): 171-174.

[3] . The crystal structure and anomalous dispersion of g-LiAlO2[J]. Acta Cryst., 1965, 19: 396-402.

[4] . Epitaxial growth and orientation of GaN on (100) g-LiAlO2[J]. MRS Internet J. Nitride Semic.Res., 1997, 2: 30-40.

[5] . Flux growth, Czochralski growth, and hydrothermal synthesis of lithium metagallate single crystals[J]. Appl. Phys. Lett., 1964, 5(9): 180-181.

[6] . The Czochralski growth of single crystal lithium aluminate, LiAlO2[J]. J. Cryst. Growth, 1981, 54: 546-550.

[7] 邹军,张连瀚,周圣明 等. g-LiAlO2晶体生长、改性和热学性质研究[J]. 物理学报. 2005, 54(9):4269～4274

[8] 邹军,周圣明, 彭观良 等. 不同退火气氛下g-LiAlO2形貌和结构研究[J]. 光学学报. 2005, 25(7):949～952

[9] 邹军,周圣明, 彭观良 等. 新型衬底材料g-LiAlO2热稳定性研究[J]. 硅酸盐学报. 2005, 33(5):564～567

[10] . Violet and blue emitting (In, Ga)N/GaN multiple quantum wells grown on g-LiAlO2 by radio frequency plasma-assisted molecular beam epitaxy[J]. Appl. Phys. Lett., 1999, 75(14): 2029-2031.

[11] . Growth of M-plane GaN(1100): a way to evade electrical polarization in nitrides[J]. Phys. Stat. Sol., 2000, 180: 133-138.

[12] . . Growth of M-plane GaN(1100) on g-LiAlO2 (100)[J]. J. Cryst. Growth, 2000, 218: 143-147.

[13] . . Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes[J]. Nature, 2000, 406: 865-868.

[14] Waltereit P, Brandt O, Ramsteiner M et al.. M-plane GaN(1100) grown on g-LiAlO2 (100): nitride semiconductors free of internal electrostatic fields [J]. J. Cryst. Growth, 2001, 227-228:437～441

[15] . . High-quality m-plane GaN thin films deposited on g-LiAlO2 by ion-beam-assisted molecular-beam epitaxy[J]. Appl. Phys. Lett., 2006, 88: 011602-1.

[16] . . MOCVD growth of GaN on LiAlO2 (100) substrates[J]. Phys. Stat. Sol., 1999, 176: 589-593.

[17] . van, B.Chai et al.. Growth studies of GaN and alloys on LiAlO2 by MOVPE[J]. Phys. Stat. Sol., 2005, 7: 2161-2165.

[18] . . Free-standing non-polar gallium nitride substrates[J]. Opto-Electron. Rev., 2003, 11(1): 7-17.

[19] Maruska H P, Hill D W, Chou M C et al.. Development of 50mm diameter non-polar gallium nitride substrates for device applications [C]. Indium Phosphide and Related Materials International Conference, 2003:567～570

[20] . . Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy[J]. J. Electron. Mater., 2005, 34(4): 357-360.

[21] . Crystal growth and liquid-phase epitaxy of gallium nitride[J]. J. Cryst. Growth, 2000, 211: 62-67.

[22] . . Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak[J]. Appl. Phys. Lett., 2004, 85(22): 5143-5145.

[23] . . Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on free-standing m-plane GaN substrates[J]. Jpn. J. Appl. Phys., 2005, 44(5): 173-175.

[24] Chakraborty A, Haskell B A, Masui H et al.. Nonpolar m-plane blue-light-emitting diode lamps with output power of 23.5 mW under pulsed operation [J]. Jpn. J. Appl. Phys., 2006, 45(2A):739～741

[25] Waltereit P. (Al, Ga,In)N heterostructures grown along polar and non-polar directions by plasma-assisted molecular beam epitaxy [D]. Humboldt-Universit 覿t, Berlin, 2001

[26] . . Impact of nucleation conditions of the structural and optical properties of M-plane GaN on g-LiAlO2 (100)[J]. J. Appl. Phys., 2002, 92(10): 5714-5719.

[27] Reed M D, Kryliouk O M, Mastro M A et al.. Growth and characterization of single-crystalline gallium nitride using (100) LiAlO2 substrates. J. Cryst. Growth, 2005, 274:14～20

[28] . . Characterization of free standing GaN grown by HVPE on a LiAlO2 substrate[J]. Phys. Stat. Sol., 2006, 203(7): 1663-1666.