中国激光, 2015, 42 (4): 0403006, 网络出版: 2015-04-02   

皮秒激光-化学复合法制备高效减反射晶硅表面微结构研究

Fabrication of High Performance Anti-Reflection Silicon Surface by Picosecond Laser Scanning Irradiation with Chemical Corrosion
作者单位
北京工业大学激光工程研究院, 北京 100124
摘要
基于皮秒激光的“冷加工”特点,进行了用皮秒激光辐照结合快速化学腐蚀(NaOH 溶液:质量分数为4%,不大于3 min,80 ℃水浴)调控工艺制备高效减反射晶硅表面微结构的研究,在400~1000 nm 波长的宽光谱范围内,获得了微-纳双结构微孔阵列和圆顶锥形周期性阵列两种减反射表面,前者的平均反射率低于5%,后者的平均反射率低于10%。制备过程中工艺可控性强,无需掩膜和真空环境。研究了激光工艺参数和化学腐蚀参数的不同调控匹配在微结构单元形成中的作用机制,分析了所制备表面微结构的减反射机理,为太阳能电池和其他半导体器件中硅基减反射表面微结构的低成本激光可控制造提供了重要的指导。
Abstract
Based on the“cold processing”property of picosecond laser, the investigation on the hybrid technique using picosecond laser irradiation followed by short-time chemical corrosion (NaOH solution, mass fraction: 4%, lass than 3 min, water bath: 80 ℃) to fabricate high performance silicon antireflection textures is carried out. Over a broad wavelength range of 400~1000 nm, the average reflectance of the two fabricated novel surface textures, which are the micro-nano hierarchical structure texture and the dome-cone array texture, both reduce to below 10%. Even the average reflection of the former reduces to below 5%. The fabrication can be carried out with high controllability and without using the etch mask and vacuum circumstance. The mechanism of different regulation matching of the laser process parameters and chemical corrosion parameters acting on the formation of the novel antireflection textures is studied. The antireflection mechanism of the textures is also analyzed. Results provide an important guide for laser fabrication of high performance silicon antireflection textures for the application in solar cells and other semiconductor devices in a low-cost and controllable way.
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吕晓占, 季凌飞, 吴燕, 林真源, 闫胤洲. 皮秒激光-化学复合法制备高效减反射晶硅表面微结构研究[J]. 中国激光, 2015, 42(4): 0403006. Lü Xiaozhan, Ji Lingfei, Wu Yan, Lin Zhenyuan, Yan Yinzhou. Fabrication of High Performance Anti-Reflection Silicon Surface by Picosecond Laser Scanning Irradiation with Chemical Corrosion[J]. Chinese Journal of Lasers, 2015, 42(4): 0403006.

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